研究了成核层生长条件对SiC衬底上GaN薄膜晶体质量和剩余应力的影响.采用AlGaN成核层并提高其生长温度,能明显降低SiC衬底上GaN外延层的缺陷密度和剩余应力.GaN薄膜的高分辨XRD摇摆曲线(0002)和(10-12)面的半峰宽达到161 arcsec和244 arcsec,拉曼频移达到567.7 cm-1.成核层的原子力显微镜结果显示GaN薄膜的晶体质量随着成核岛密度的降低而提高.
参考文献
| [1] | 周明斌,李振荣,范世(马岂),徐卓.7 MPa氮压下Na助熔剂法生长GaN晶体的研究[J].人工晶体学报,2013(02):203-207,225. |
| [2] | 李亮,李忠辉,罗伟科,董逊,彭大青,张东国.高质量GaN薄膜的MOCVD同质外延生长[J].人工晶体学报,2013(05):915-917. |
| [3] | Rusheng Wei;Sheng Song;Kun Yang;Yingxin Cui;Yan Peng;Xiufang Chen;Xiaobo Hu;Xiangang Xu .Thermal conductivity of 4H-SiC single crystals[J].Journal of Applied Physics,2013(5):053503-1-053503-4. |
| [4] | 陈耀,王文新,黎艳,江洋,徐培强,马紫光,宋京,陈弘.国产SiC衬底上利用AIN缓冲层生长高质量GaN外延薄膜[J].发光学报,2011(09):896-901. |
| [5] | Z.J. Reitmeier;S. Einfeldt;R.F. Davis .Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001) substrates[J].Acta materialia,2009(14):4001-4008. |
| [6] | 江洋,罗毅,席光义,汪莱,李洪涛,赵维,韩彦军.AlGaN插入层对6H-SiC上金属有机物气相外延生长的GaN薄膜残余应力及表面形貌的影响[J].物理学报,2009(10):7282-7287. |
| [7] | 陈秀芳,徐现刚,胡小波,杨光,宁丽娜,王英民,李娟,姜守振,蒋民华.6H-SiC衬底片的表面处理[J].人工晶体学报,2007(05):962-966. |
| [8] | G. Li;S. J. Chua;S. J. Xu;W. Wang;P. Li;B. Beaumont;P. Gibart .Nature and elimination of yellow-band luminescence and donor-acceptor emission of undoped GaN[J].Applied physics letters,1999(19):2821-2823. |
| [9] | Kuball M. .Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control[J].Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films,2001(10):987-999. |
| [10] | Wang D;Jia S;Chen KJ;Lau KM;Dikme Y;van Gemmern P;Lin YC;Kalisch H;Jansen RH;Heuken M .Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition[J].Journal of Applied Physics,2005(5):6103-1-6103-3-0. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%