{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"概述了含有硝基有机化合物、氰化物、元素周期表中第Ⅴ族、Ⅵ族、Ⅶ族元素的含氧酸或含氧酸盐等组成的金属银剥离液,适用于剥离<span style=\"color:red\">IC</span><span style=\"color:red\">引线</span><span style=\"color:red\">架</span>等电子元器件镀银时,在不需要镀银的掩膜部分由于感应电流等因素,在绝缘膜上析出的银瘤.","authors":[{"authorName":"王丽丽","id":"b6dc94e0-d988-43b4-a7a1-ceff44df5c5a","originalAuthorName":"王丽丽"}],"doi":"10.3969/j.issn.1001-3849.2000.01.014","fpage":"42","id":"8d8a6017-6c0c-4b50-b7fe-ff91fbcc805a","issue":"1","journal":{"abbrevTitle":"DDYJS","coverImgSrc":"journal/img/cover/DDYJS.jpg","id":"20","issnPpub":"1001-3849","publisherId":"DDYJS","title":"电镀与精饰   "},"keywords":[{"id":"6bb35c48-9306-4dff-8dfa-85a225c876da","keyword":"银剥离液","originalKeyword":"银剥离液"},{"id":"4e27ee3b-16ae-4d96-bd65-3beece4e5871","keyword":"<span style=\"color:red\">IC</span><span style=\"color:red\">引线</span><span style=\"color:red\">架</span>","originalKeyword":"IC引线架"},{"id":"7571c134-baf2-4735-8395-3f7e01d42e68","keyword":"镀银","originalKeyword":"镀银"}],"language":"zh","publisherId":"ddjs200001014","title":"银剥离液","volume":"22","year":"2000"},{"abstractinfo":"分析了黑瓷封装<span style=\"color:red\">IC</span>外<span style=\"color:red\">引线</span>镀锡中出现的封装玻璃发白、表面粗糙、封装玻璃与外<span style=\"color:red\">引线</span>连锡造成外<span style=\"color:red\">引线</span>极间短路的原因,提出了解决方法.","authors":[{"authorName":"杨建功","id":"5f8efe31-4224-4086-9eb0-185b101eecbd","originalAuthorName":"杨建功"},{"authorName":"吴彩霞","id":"5b7f2986-31f4-438c-aef3-ac94f79a1275","originalAuthorName":"吴彩霞"}],"doi":"10.3969/j.issn.1004-227X.2001.05.010","fpage":"34","id":"432c41ce-adc6-4273-ba91-12f1d1620a7e","issue":"5","journal":{"abbrevTitle":"DDYTS","coverImgSrc":"journal/img/cover/DDYTS.jpg","id":"21","issnPpub":"1004-227X","publisherId":"DDYTS","title":"电镀与涂饰   "},"keywords":[{"id":"5414ac72-af9d-47ee-811a-837305391520","keyword":"镀锡","originalKeyword":"镀锡"},{"id":"fb527c59-cc15-4617-9952-948fa3fbc1b9","keyword":"连锡","originalKeyword":"连锡"}],"language":"zh","publisherId":"ddyts200105010","title":"黑瓷封装<span style=\"color:red\">IC</span>外<span style=\"color:red\">引线</span>镀锡后连锡短路的故障处理","volume":"20","year":"2001"},{"abstractinfo":"从合金设计、制备方法、热处理和加工工艺4个方面介绍了国内外<span style=\"color:red\">引线</span>框架用Cu-CR-ZR系铜合金的研究、生产和应用的现状,以及获得高强度、高电导Cu-CR-Zr系铜合金的基本原理与方法.指出我国高强高导铜合金材料制备的基础研究还有待提高,高精度板带加工技术还比较落后,自动化、规模化生产还比较薄弱.只有开发出具有自主知识产格的技术和产品,才能实现我国高强高导材料发展的历史性飞跃.","authors":[{"authorName":"傅声华","id":"14584074-95e9-4b1c-aac5-226fd4557bc1","originalAuthorName":"傅声华"},{"authorName":"陆峰","id":"165a46d0-a496-4d19-ba60-a4e96291978c","originalAuthorName":"陆峰"},{"authorName":"李询","id":"130c4e73-24c1-48ed-b163-b3090173a77a","originalAuthorName":"李询"}],"doi":"","fpage":"1","id":"34bbb987-c46d-45ca-94d5-14469f25435a","issue":"4","journal":{"abbrevTitle":"ZGCLJZ","coverImgSrc":"journal/img/cover/中国材料进展.jpg","id":"80","issnPpub":"1674-3962","publisherId":"ZGCLJZ","title":"中国材料进展"},"keywords":[{"id":"fad75553-4379-4027-b1ff-7b72855b5684","keyword":"Cu-Cr-Zr系合金","originalKeyword":"Cu-Cr-Zr系合金"},{"id":"b17318fa-a28d-43d5-8b3f-8a37e632145d","keyword":"高强高导","originalKeyword":"高强高导"},{"id":"c14f10ba-d617-43dd-822d-f62f14d16631","keyword":"热处理","originalKeyword":"热处理"},{"id":"83debd48-912b-4832-8eeb-8a6568c4bb9f","keyword":"加工工艺","originalKeyword":"加工工艺"}],"language":"zh","publisherId":"zgcljz200804001","title":"<span style=\"color:red\">IC</span><span style=\"color:red\">引线</span>框架用Cu-Cr-Zr系材料的研究现状与发展","volume":"27","year":"2008"},{"abstractinfo":"<span style=\"color:red\">引线</span>框架材料是半导体元器件和集成电路封装的主要材料之一,其主要功能为电路连接、散热、机械支撑等作用.随着<span style=\"color:red\">IC</span>向高密度、小型化、低成本方向的发展,对<span style=\"color:red\">引线</span>框架材料提出了高强度、高导电、高导热等多方面性能上的要求.由于拥有良好的导热性能,铜合金已成为主要的<span style=\"color:red\">引线</span>框架材料.对电子封装<span style=\"color:red\">引线</span>框架材料的性能要求、设计理论以及国内外研究发展现状等进行了综述.","authors":[],"doi":"","fpage":"64","id":"9a8f4ce8-2a6f-48b9-9309-e98fa488c8b5","issue":"z3","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"1e5755c9-4be5-46e4-9452-8eda46a32e84","keyword":"<span style=\"color:red\">引线</span>框架材料","originalKeyword":"引线框架材料"},{"id":"ed508bfa-c938-4e21-afa3-42aeb1aef882","keyword":"高强度","originalKeyword":"高强度"},{"id":"c86cdf7b-302e-4ae9-b0a3-dad43576a900","keyword":"高导电","originalKeyword":"高导电"},{"id":"af1b472e-8337-4996-b886-3bdcb92d5eea","keyword":"铜合金","originalKeyword":"铜合金"}],"language":"zh","publisherId":"cldb2004z3018","title":"<span style=\"color:red\">引线</span>框架材料的研究发展现状","volume":"18","year":"2004"},{"abstractinfo":"<span style=\"color:red\">引线</span>框架材料是半导体元器件和集成电路封装的主要材料之一.其主要功能为电路连接、散热、机械支撑等.随着<span style=\"color:red\">IC</span>向高密度、小型化、大功率、低成本方向发展,集成电路I/O数目增多、引脚间距减小,对<span style=\"color:red\">引线</span>框架材料提出了高强度、高导电、高导热等多方面性能上的要求.由于拥有良好的导电导热性能.铜合金已成为主要的<span style=\"color:red\">引线</span>框架材料.本文对电子封装铜舍金<span style=\"color:red\">引线</span>框架材料的性能要求、国内外研究与发展等进行了综述.\n","authors":[{"authorName":"马莒生","id":"9ec7f7b5-c9ee-41ae-a5cd-0b63284de86e","originalAuthorName":"马莒生"},{"authorName":"黄福祥","id":"d1132c1c-22dd-4553-b5b8-2ed852755ff3","originalAuthorName":"黄福祥"},{"authorName":"黄乐","id":"4d6f4085-aee7-49f1-9ce0-94dd0e0dd4c1","originalAuthorName":"黄乐"},{"authorName":"耿志挺","id":"e919ea8b-7edb-4d5b-9686-5bb225529d4c","originalAuthorName":"耿志挺"},{"authorName":"宁洪龙","id":"d76bf9f6-3ff1-45c1-995f-159d30a93e4f","originalAuthorName":"宁洪龙"},{"authorName":"韩振宇","id":"1eb0831c-1982-4290-8f61-fff7ac4c0b74","originalAuthorName":"韩振宇"}],"doi":"","fpage":"1","id":"ceadca58-93e6-4d71-b620-48df589c6f38","issue":"1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"9948b71f-b5ee-4af1-ac3f-4d711f6e979c","keyword":"<span style=\"color:red\">引线</span>框架材料","originalKeyword":"引线框架材料"},{"id":"c54f2637-cd70-468e-ba66-9cfeaf61e2fc","keyword":"铜合金","originalKeyword":"铜合金"},{"id":"6a9d8574-4a44-43df-abe3-7533ff4724d7","keyword":"高强度","originalKeyword":"高强度"},{"id":"300054f6-b619-4aea-b941-e2342f3f232c","keyword":"高导电","originalKeyword":"高导电"}],"language":"zh","publisherId":"gncl200201001","title":"铜基<span style=\"color:red\">引线</span>框架材料的研究与发展","volume":"33","year":"2002"},{"abstractinfo":"<span style=\"color:red\">引线</span>键合是MEMS传感器最常用的封装形式之一,传统<span style=\"color:red\">IC</span><span style=\"color:red\">引线</span>键合设备的批量制造特点限制了MEMS制造的灵活性.本文将连续变倍显微镜作为视觉传感器建立柔性显微视觉系统,并与改造后的手动<span style=\"color:red\">引线</span>键合机相结合,建立了面向MEMS的自动<span style=\"color:red\">引线</span>键合系统.通过分析变倍显微镜的成像模型提出了一种适用于变倍显微镜的自动调焦方法,以获取不同倍数下的清晰图像.利用变倍显微镜可以连续变倍的特点,在低放大倍数下进行大范围粗定位,高放大倍数下进行精定位,从而实现大范围高精度定位.最后通过实验验证了该系统的实用性.","authors":[{"authorName":"陈立国","id":"84407c70-00af-469b-a540-b459a8522203","originalAuthorName":"陈立国"},{"authorName":"杨治亮","id":"c7ddc3f8-435c-4e44-afc5-ec24647a4ae7","originalAuthorName":"杨治亮"},{"authorName":"马凌宇","id":"b7831712-7194-4396-b358-b96a8b298dc1","originalAuthorName":"马凌宇"},{"authorName":"孙立宁","id":"48a6f9f5-a6a2-49cc-86d5-db90f4d1d91e","originalAuthorName":"孙立宁"}],"doi":"10.3969/j.issn.1007-4252.2008.02.006","fpage":"308","id":"c4783aeb-22f5-4245-bda4-e483b48881b1","issue":"2","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"54f57427-fb29-4244-a2ab-138464c5fe12","keyword":"MEMS","originalKeyword":"MEMS"},{"id":"d9dcc8fe-2a69-4037-9c8c-7abec5df961e","keyword":"<span style=\"color:red\">引线</span>键合","originalKeyword":"引线键合"},{"id":"488dd08a-c372-4f7f-a7a1-3dad787b17ab","keyword":"显微视觉","originalKeyword":"显微视觉"}],"language":"zh","publisherId":"gnclyqjxb200802006","title":"MEMS器件自动<span style=\"color:red\">引线</span>键合系统","volume":"14","year":"2008"},{"abstractinfo":"介绍了电缆桥<span style=\"color:red\">架</span>电弧喷涂的工艺流程,包括:桥<span style=\"color:red\">架</span>焊缝处理-表面喷砂处理-电弧喷锌-涂层封闭-检查-成品.讨论了各工序的特点和要求.","authors":[{"authorName":"聂玉华","id":"192c546c-dc26-4fab-a979-45058e21f299","originalAuthorName":"聂玉华"}],"doi":"","fpage":"54","id":"14d459c7-e84c-4d2a-b723-a0fbcd0e2087","issue":"9","journal":{"abbrevTitle":"DDYTS","coverImgSrc":"journal/img/cover/DDYTS.jpg","id":"21","issnPpub":"1004-227X","publisherId":"DDYTS","title":"电镀与涂饰   "},"keywords":[{"id":"7cf4f8ca-3275-4d1c-a68c-b997691c3e21","keyword":"电缆桥<span style=\"color:red\">架</span>","originalKeyword":"电缆桥架"},{"id":"6bb9d918-9964-4957-94d2-89a405e6a6b9","keyword":"电弧喷涂","originalKeyword":"电弧喷涂"},{"id":"9f94302c-3e3a-4d33-9de6-769476b9f0aa","keyword":"喷砂","originalKeyword":"喷砂"},{"id":"55b9316d-3ef1-4614-8ada-20ecd7d5dbb1","keyword":"封孔","originalKeyword":"封孔"}],"language":"zh","publisherId":"ddyts200809018","title":"电缆桥<span style=\"color:red\">架</span>的电弧喷涂工艺","volume":"27","year":"2008"},{"abstractinfo":"综述了<span style=\"color:red\">引线</span>框架用高强高导铜合金的种类、特性要求与目前国内外的研究重点, 总结了高强高导铜合金的开发趋势, 展望了其应用在<span style=\"color:red\">IC</span>封装业的市场前景. ","authors":[{"authorName":"赵谢群","id":"c2e5d79c-a611-487e-80dd-ec73cd816d72","originalAuthorName":"赵谢群"}],"doi":"10.3969/j.issn.0258-7076.2003.06.026","fpage":"777","id":"93b7577b-8ab5-45a3-b861-24dc8f1d3efd","issue":"6","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"adbc83b4-3398-4ec0-9113-151bd2c3d436","keyword":"集成电路封装","originalKeyword":"集成电路封装"},{"id":"01e56965-a336-4961-9b89-117b68dce3ba","keyword":"<span style=\"color:red\">引线</span>框架","originalKeyword":"引线框架"},{"id":"8091421f-478a-44d8-a71f-5ca951f282ba","keyword":"铜合金","originalKeyword":"铜合金"},{"id":"b37ae055-fcb0-4020-ae5e-a106e1cfac10","keyword":"高强度","originalKeyword":"高强度"},{"id":"1310c318-cbc3-441f-befa-0ffe8ae4978f","keyword":"高电导率","originalKeyword":"高电导率"}],"language":"zh","publisherId":"xyjs200306026","title":"<span style=\"color:red\">引线</span>框架铜合金材料研究及开发进展","volume":"27","year":"2003"},{"abstractinfo":"通过氧化膜剥落实验发现,在相同条件下,EFTEC64T和C194两种材料的氧化膜与基底结合强度较高,不易剥离,而C5191和C7025两种材料则较差.通过AES对各铜合金材料氧化膜进一步的分析表明:铜合金材料氧化膜基本结构为CuO/Cu2O/Cu,且氧化膜的结合强度与CuO成分在氧化膜中所占比例有关,比例愈高则越易剥落.研究还发现:在氧化过程中,铜合金的某些微量元素会在氧化膜与基底的界面上发生富集偏析,这是导致氧化膜结合强度减弱的主要原因.","authors":[{"authorName":"沈宏","id":"03835e29-bb6e-4c69-9cf3-2af24d54596e","originalAuthorName":"沈宏"},{"authorName":"李明","id":"5e44bf94-9e1f-491d-84f3-4522f74aec77","originalAuthorName":"李明"},{"authorName":"毛大立","id":"eb083e36-a528-44cd-a0c5-6e6a05d52470","originalAuthorName":"毛大立"}],"doi":"","fpage":"109","id":"3f4bf48c-cc30-487f-9d83-19f2457e1389","issue":"z2","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"e8527dc5-3705-4637-b012-a96a2726ab32","keyword":"<span style=\"color:red\">引线</span>框架材料","originalKeyword":"引线框架材料"},{"id":"cb42dc1a-654b-498b-9426-6b054543d215","keyword":"铜合金","originalKeyword":"铜合金"},{"id":"497cb14e-b54c-4c18-8e62-d90410ac011d","keyword":"氧化失效","originalKeyword":"氧化失效"},{"id":"c4f0239b-3b2c-468e-9ce0-b1f4eab79592","keyword":"结合强度","originalKeyword":"结合强度"},{"id":"a45e5740-3329-424e-9133-04ff5eb94d99","keyword":"电子封装","originalKeyword":"电子封装"}],"language":"zh","publisherId":"xyjsclygc2006z2027","title":"<span style=\"color:red\">IC</span>铜合金<span style=\"color:red\">引线</span>框架材料的氧化失效及其机理","volume":"35","year":"2006"},{"abstractinfo":"通过氧化膜剥落实验发现,在相同条件下,EFTEC64T和C194两种材料的氧化膜与基底结合强度较高,不易剥离,而C5191和C7025两种材料则较差.通过AES对各铜合金材料氧化膜进一步的分析表明:铜合金材料氧化膜基本结构为CuO/Cu2O/Cu,且氧化膜的结合强度与CuO成分在氧化膜中所占比例有关,比例愈高则越易剥落.研究还发现:在氧化过程中,铜合金的某些微量元素会在氧化膜与基底的界面上发生富集偏析,这是导致氧化膜结合强度减弱的主要原因.","authors":[{"authorName":"沈宏","id":"95bb6d42-4e9e-417a-93ac-f21330f20cff","originalAuthorName":"沈宏"},{"authorName":"李明","id":"ccc6ce7b-b74e-4488-a829-5fe49595236e","originalAuthorName":"李明"},{"authorName":"毛大立","id":"5f252ed2-a2ea-4f26-a959-16890bf780f3","originalAuthorName":"毛大立"}],"doi":"","fpage":"109","id":"6ba45111-0d48-4d5b-817d-18935c705568","issue":"z1","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"48213444-a3a0-4561-9155-291bf7821b1e","keyword":"<span style=\"color:red\">引线</span>框架材料","originalKeyword":"引线框架材料"},{"id":"628e4abe-6924-4a92-9d90-5fd06274785f","keyword":"铜合金","originalKeyword":"铜合金"},{"id":"3df0e07d-8214-40e6-98c3-d1635c9be0db","keyword":"氧化失效","originalKeyword":"氧化失效"},{"id":"e93e2716-852f-4bf6-b6fa-da222dc6d02f","keyword":"结合强度","originalKeyword":"结合强度"},{"id":"77e1fa9e-1228-411a-ae51-04625690ddf3","keyword":"电子封装","originalKeyword":"电子封装"}],"language":"zh","publisherId":"xyjsclygc2006z1027","title":"<span style=\"color:red\">IC</span>铜合金<span style=\"color:red\">引线</span>框架材料的氧化失效及其机理","volume":"35","year":"2006"}],"totalpage":72,"totalrecord":714}