采用催化剂辅助化学气相沉积法,通过固-液-气(V-L-S)机理控制在硅衬底上制备了高质量的InN纳米线.利用FESEM、XRD、HRTEM对制备的InN纳米线的表面形貌和结构进行了表征.分析表明合成的InN纳米线为标准的六方纤锌矿结构,纳米线沿[102]方向生长.室温PL光谱表明,制备的InN纳米线在1580nm(0.78eV)处存在很强的无缺陷的带边发射,与六方纤锌矿结构InN单晶发射峰位置一致,表现出良好的光电性能.
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