使用扫描电子显微镜、电子能谱仪、X射线衍射仪对经950～1100℃热处理的SiC/TiAl平面界面偶界面固相反应层的成分分布、微结构及相组成等进行了分析研究,讨论了SiC/TiAl界面固相反应机制,并对热处理过程中反应层成长的动力学过程进行了探讨,获得相应的动力学方程.结果表明,SiC/TiAl界面固相反应层主要由TiC、Ti5Si3Cx及Ti(Al,Si)2构成.其中,TiC和Ti5Si3Cx主要富集于邻近SiC的反应区,而Ti(Al,Si)2富集于邻近TiAl侧的反应区.SiC/TiAl界面固相反应的发生归因于TiC和Ti5Si3Cx数值大的负吉布斯自由能变化.SiC/TiAl界面固相反应层遵循抛物线生长规律,为扩散控制的反应过程,反应速率常数为:K=8.47×10-3exp(-322×103/RT)(m2/s).
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