ZnO薄膜中的本征点缺陷对材料的电学、发光性能有着至关重要的影响.目前,对本征点缺陷的研究是ZnO领域的一大热点,也是实现ZnO基光电器件的关键技术之一.本文结合最新研究,扼要综述了本征点缺陷的电荷特性、对本征ZnO为n型的作用机理、对p型ZnO制备的影响及点缺陷对薄膜绿光发光的贡献.
参考文献
| [1] | KlingshirnC .[J].Physica Status Solidi B,1975,71:547. |
| [2] | King SL.;Boyd IW.;Gardeniers JGE. .PULSED-LASER DEPOSITED ZNO FOR DEVICE APPLICATIONS[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1996(0):811-818. |
| [3] | SamuelJI;Kourosh K Z;Adrian T et al.Proc SPIE Int Soc[J].OPTICAL ENGINEERING,2003,5116:904. |
| [4] | LiuMJ;Kim H K .[J].Applied Physics Letters,2004,84:173. |
| [5] | QuinnCH;Yang S H .[J].Journal of the Electrochemical Society,2003,150:A652. |
| [6] | Vasuda;Leonid K K;Mark H W .[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,2004,22:165. |
| [7] | ServiceRF .[J].科学（上海),1997,276:895. |
| [8] | SunYM;Wang H Z .[J].Physical Review B,2003,325:157. |
| [9] | SukkarMH;Tuller H L .[J].Colum-bus American Ceramic Society,1982,7:71. |
| [10] | MahanGD .[J].Journal of Applied Physiology,1983,54:3825. |
| [11] | HoffmanJW;Lauder I .[J].Transactions of the Faraday Society,1970,66:2346. |
| [12] | ZieglerE;Heinrich A;Oppermann H et al.[J].Physica Status Solidi A,1981,66:635. |
| [13] | XuPS;Sun Y M et al.[J].Physical Review B,2003,199:286. |
| [14] | TuomistoF;Ranki V;Look D C et al.[J].Applied Physics Letters,2003,91(1-4):205502. |
| [15] | Look DC.;Sizelove JR.;Hemsky JW. .Residual native shallow donor in ZnO[J].Physical review letters,1999(12):2552-2555. |
| [16] | KasaiPH .[J].Physical Review,1963,130:989. |
| [17] | 徐毓龙.氧化物与化合物半导体基础[M].西安:西安电子科技大学出版社,1991 |
| [18] | FumiyasuO;Shigeto R N et al.[J].Journal of Applied Physiology,2001,90:824. |
| [19] | KohanAF;Chris G Van de Walle et al.[J].Physical Review B,2000,61:15010. |
| [20] | Look DC.;Sizelove JR.;Jones RL.;Litton CW.;Cantwell G. Harsch WC.;Reynolds DC. .Electrical properties of bulk ZnO[J].Solid State Communications,1998(6):399-401. |
| [21] | VanheusdenK;Seager C H et al.[J].Applied Physics Letters,1996,68:403. |
| [22] | YamamotoT;Katayama H Y .[J].Japanese Journal of Applied Physics,1997,36:L1453. |
| [23] | AokiT;Hatanaka Y .[J].Applied Physics Letters,2000,76:3257. |
| [24] | TuzemenS;Xiong G;Wilkinson J .[J].Physical Review B,2001,308-310:1197. |
| [25] | TaataH;Saeki M;Guo S L et al.[J].Physical Review B,2001,308-310:993. |
| [26] | ZhangS;Wei S H;Zunger A .[J].Physical Review B,2001,63(1-7):075205. |
| [27] | XiongG et al.[J].Applied Physics Letters,2001,80:1195. |
| [28] | XiongG;Tuzemen S et al.[J].Proceedings of SPIE-The International Society for Optical Engineering,2002,4644:256. |
| [29] | JosephM;Tabata H;Saeki H et al.[J].Physical Review B,2001,302-303:140. |
| [30] | LeeEC;Kim Y S et al.[J].Physical Review B,2001,308-310:912. |
| [31] | MinegishiK;Koiwai Y;Kikuchi Y et al.[J].Japanese Journal of Applied Physics,1997,36:11453. |
| [32] | 吕建国,叶志镇,陈汉鸿,汪雷,赵炳辉,张银珠.直流反应磁控溅射生长p型ZnO薄膜及其特性的研究[J].真空科学与技术学报,2003(01):5-8. |
| [33] | YeZZ;Chen H H et al.[J].Chinese Journal of Semiconductors,2001,22:1015. |
| [34] | LiW;Mao D S;Zhang F M et al.[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,2000,18:2295. |
| [35] | LiW;Mao D S;Zhang F M et al.[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,2001,19:1004. |
| [36] | Kang JS.;Kang HS.;Pang SS.;Shim ES.;Lee SY. .Investigation on the origin of green luminescence from laser-ablated ZnO thin film[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):5-8. |
| [37] | KangHS;Kang J S et al.[J].Journal of Applied Physiology,2004,95:1246. |
| [38] | VanheusdenK;Warrmen W L et al.[J].Applied Physics Letters,1996,79:7983. |
| [39] | AlivovYI;Chukichev M V;Nikitenko V A .[J].Semiconductor International,2004,38:34. |
| [40] | 李炜,茅东升,张福民,王曦,柳襄怀,邹世昌,诸玉坤,李琼,徐静芳.离子束溅射制备ZnO：Zn荧光薄膜[J].材料研究学报,2001(01):33-40. |
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