发展了一种新的VO2薄膜制备方法-V2O5熔化成膜法,其基本步骤为:基片预处理-涂粉-熔化成膜-真空退火-VO2薄膜.采用XRD和XPS等手段,对所得薄膜的物相组成与价态进行了分析,同时对薄膜进行了电阻随温度变化的测试.结果表明:通过该方法获得的薄膜,其主要成分是VO2,电阻突变达到4个数量级,相变温度为67.5℃.
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