采用磁控溅射在玻璃基底上沉积Mg-Zr-O复合介质保护膜,研究Zr掺杂含量对薄膜微观结构和放电性能(着火电压,最小维持电压)的影响.结果发现,沉积的Mg-Zr-O薄膜晶粒细小,微观结构仍然保持Mg0的面心立方NaCl型结构,所掺杂的Zr以Zr4+形式置换固溶于Mg0晶格中.当掺杂Zr浓度为2.03at%时,薄膜具有最强的(200)择优取向和最小的表面粗糙度.适当Zr掺杂的Mg-Zr-O薄膜和纯Mg0薄膜相比,其着火电压和最小维持电压分别降低了25和15 V.
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