以含一定比例Ga与As2O3的酸性溶液(pH=2.5)作为前驱溶液,以Pt片为对电极,饱和甘汞电极(SCE)为参比电极,室温下利用三电极电化学站在Ti衬底上恒压沉积GaAs薄膜.然后对GaAs薄膜进行退火处理.利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM),以及荧光光度计(PL)分别对不同沉积电压下所制备的薄膜的晶体结构,薄膜形貌以及光学性能进行分析表征.结果表明:沉积电压以及退火过程对GaAs薄膜的形貌、晶体结构、薄膜质量有很大影响,所制备的GaAs薄膜退火前晶化程度较低,部分粒子表现出不均匀团聚.光致发光峰为红光发射,且单色性好.退火后的GaAs薄膜为面心立方晶型,呈纳米颗粒状,薄膜的光电性能明显提高.
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