在SBN中掺进0.1%(质量分数)CeO2和0.1%(质量分数)Eu2O3,以Czochralski技术生长Ce:Eu:SBN晶体,在空气中退火24h,退火温度为1300℃.测试Ce:Eu:SBN晶体的住相共轭反射率和响应时间.Ce:Eu:SBN晶体最大位相共轭反射率(R=92%)和响应时间(38s),以Ce:Eu:SBN晶体作为存储元件和位相共轭镜(阈值,增益反馈系统)进行全息关联存储实验.系统具有实时处理、反复使用、成像质量好、信噪比高等优点.Ce:Eu:SBN晶体是比SBN晶体全息存储性能更好的晶体.
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