采用电感耦合等离子体化学气相沉积技术制备了氮化纳米硅薄膜,利用Raman散射、x射线衍射、红外吸收等技术对不同氮稀释条件下薄膜的微观结构和键合特性变化进行了研究.结果表明,较高的氢稀释比导致薄膜从非晶硅到纳米晶硅的结构转化,随着氮稀释比的增加,所沉积薄膜的晶化度及纳米晶硅的晶粒尺寸单调增加,纳米硅颗粒呈现在(110)方向的择优生长趋势.键合特性分析显示,随氢稀释比增加,薄膜中整体健合氮含量减小,而SiH2 健合比例呈现显著增加趋势,该结果反映了氮原子刻蚀和纳米硅界面面积比的同时增强.光学吸收谱分析表明,通过改变反应气体的氢稀释比,可实现从1.72^-1.84eV光学带隙可调的纳米硅薄膜制备.
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