采用放电等离子烧结(SPS)方法烧结出了致密的掺镓氧化锌陶瓷(0.075wt％ GZO).样品的烧结温度为950～1200℃,烧结时间为3～21 min,并对样品的物相、断口形貌、电学性能以及密度进行了测试和分析.结果表明,烧结条件对GZO的晶体结构没有影响,但是对样品的密度、晶粒尺寸、电阻率等性质有一定的影响.综合分析上述结果可得到用SPS方法烧结GZO陶瓷的最佳烧结工艺是烧结温度1100℃,烧结时间9 min.
参考文献
| [1] | Claus Klingshirn;J. Fallert;H. Zhou;J. Sartor;C. Thiele;F. Maier-Flaig;D. Schneider;H. Kalt.65 years of ZnO research – old and very recent results[J].Physica status solidi, B. Basic research,20106(6):1424-1447. |
| [2] | Janisch R;Gopal P;Spaldin NA.Transition metal-doped TiO2 and ZnO - present status of the field[J].Journal of Physics. Condensed Matter,200527(27):R657-R689. |
| [3] | Bandyopadhyay S.;Paul GK.;Roy R.;Sen SK.;Sen S..Study of structural and electrical properties of grain-boundary modified ZnO films prepared by sol-gel technique[J].Materials Chemistry and Physics,20021(1):83-91. |
| [4] | M. HOUABES;S. BERNIK;C. TALHI.The effect of aluminium oxide on the residual voltage of ZnO varistors[J].Ceramics International,20056(6):783-789. |
| [5] | Anderson Janotti;Chris G. Van de Walle.Native point defects in ZnO[J].Physical review, B. Condensed matter and materials physics,200716(16):165202.1-165202.22. |
| [6] | King, P.D.C.;Veal, T.D..Conductivity in transparent oxide semiconductors[J].Journal of Physics. Condensed Matter,201133(33):334214-1-334214-17. |
| [7] | Room-temperature Deposition Of Transparent Conducting Al-doped Zno Films By Rf Magnetron Sputtering Method[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,200911(11):5669-5673. |
| [8] | Rongyao Wang;Xiaochun Wu;Bingsuo Zou;Li Wang;Sishen Xie;Jiren Xu;Wei Huang.Nonresonant optical nonlinearity of ZnO composite nanoparticles with different interfacial chemical environments[J].Materials research innovations,19981(1):49-52. |
| [9] | Hsiu-Ling Hsu;Ching-Been Yang;Chia-Ho Huang;Chun-Yao Hsu.Electrical and optical studies of Ga-doped ZnO thin films[J].Journal of Materials Science. Materials in Electronics,20131(1):13-19. |
| [10] | Park YR;Kim YS.Organic light-emitting diodes with hydrogenated In-doped ZnO thin films as transparent conductive electrodes[J].Journal of Materials Research,20086(6):1674-1681. |
| [11] | C.M. Muiva;T.S. Sathiaraj;K. Maabong.Effect of doping concentration on the properties of aluminium doped zinc oxide thin films prepared by spray pyrolysis for transparent electrode applications[J].CERAMICS INTERNATIONAL,20112(2):555-560. |
| [12] | Jang, MS;Ryu, MK;Yoon, MH;Lee, SH;Kim, HK;Onodera, A;Kojima, S.A study on the Raman spectra of Al-doped and Ga-doped ZnO ceramics[J].Current applied physics: the official journal of the Korean Physical Society,20093(3):651-657. |
| [13] | 吴木营;刘敏霞;李洪涛;杨雷;张伟风.制备条件对镓掺杂氧化锌薄膜的透明导电性影响[J].河南大学学报（自然科学版）,2012(6):707-711. |
| [14] | ZHAO Shixian;SONG Xiaoyan;WANG Mingsheng;LIU Guoquan;ZHANG Jiuxing.Preparation of ultrafine WC-Co cermets by combining pretreatment and consolidation with spark plasma sintering[J].稀有金属（英文版）,2009(04):391-395. |
| [15] | Xuemei Liu;Xiaoyan Song;Chongbin Wei.Quantitative characterization of the microstructure and properties of nanocrystalline WC-Co bulk[J].Scripta materialia,201210(10):825-828. |
| [16] | Liu, XM;Song, XY;Zhao, SX;Zhang, JX.Spark Plasma Sintering Densification Mechanism for Cemented Carbides with Different WC Particle Sizes[J].Journal of the American Ceramic Society,201010(10):3153-3158. |
| [17] | H. Colder;E. Guilmeau;C. Harnois.Preparation of Ni-doped ZnO ceramics for thermoelectric applications[J].Journal of the European Ceramic Society,201115(15):2957-2963. |
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