使用一种新奇的稀土元素作为GaN纳米棒生长的催化剂,通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜成功合成了大规模的GaN纳米棒.采用扫描电子显微镜,X射线衍射,透射电子显微镜,高分辨透射电子显微镜和傅立叶红外吸收光谱来检测样品的形态,结构和成分.研究结果表明,合成的样品为六方纤锌矿结构的单晶GaN纳米棒.最后讨论了GaN纳米棒的生长机理.
参考文献
| [1] | Xu BS;Zhai LY;Liang J;Ma SF;Jia HS;Liu XG .Synthesis and characterization of high purity GaN nanowires[J].Journal of Crystal Growth,2006(1):34-39. |
| [2] | Han W Q;Zettl A .[J].Applied Physics Letters,2002,80:303-305. |
| [3] | Duan X;Lieber C M .[J].Journal of the American Chemical Society,2000,122:188-189. |
| [4] | Li J Y;Chen X L et al.[J].Journal of Crystal Growth,2000,213:408-410. |
| [5] | Han W;Fan S;Li Q et al.[J].Science,1997,277:1287-1289. |
| [6] | Peng HY.;Wang N.;Zheng YF.;Liao LS.;Shi WS.;Lee CS.;Lee ST.;Zhou XT. .Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition[J].Chemical Physics Letters,2000(5-6):263-270. |
| [7] | Perlin P;Jauberthie-carllon C;Itie J P et al.[J].Physical Review B:Condensed Matter,1992,45:83-89. |
| [8] | Boo JH.;Ho W.;Rohr C. .MOCVD of BN and GaN thin films on silicon: new attempt of GaN growth with BN buffer layer[J].Journal of Crystal Growth,1998(0):439-444. |
| [9] | Sun Y;Miyasato T;Wigmore J K .[J].Journal of Applied Physics,1999,85:3377-3379. |
| [10] | Melendezlira M.;Kramer KM.;Thompson MO.;Cave N.;Liu R. Christiansen JW.;Theodore ND.;Candelaria JJ.;Menendez J. .SUBSTITUTIONAL CARBON IN SI1-YCY ALLOYS AS MEASURED WITH INFRARED ABSORPTION AND RAMAN SPECTROSCOPY[J].Journal of Applied Physics,1997(9):4246-4252. |
| [11] | Meng G W;Zhang L D;Qin Y et al.[J].Nano-Structured Materials,1999,12:1003-1006. |
| [12] | Xu B S;Yang D;Wang F et al.[J].Applied Physics Letters,2006,89:074106-074108. |
| [13] | Xue C;Wu Y;Zhuang H et al.[J].Physica E,2005,30:179-181. |
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