研究了Si晶体中微印压和氧沉淀应力场开动位错的临界切应力τc结果表明,在充分大的距离内,微印压或氧沉淀连同邻近的位错群可视为一个集中应力芯;其应力场随距离增大而趋于零.在此基础上获得了求τc的公式,求得区熔和直拉Si单晶在900℃时的τc为3.1×103和5.3×103N.cm-2.
The critical stress τc. to drive dislocations for the stress field generated either by micro indentations or oxygen precipitates in Si crystals is researched. The results show that the indentating or the oxygen precipitate with a group of near dislocation
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| [2] | |
| [3] | |
| [4] | |
| [5] | |
| [6] | |
| [7] | |
| [8] | KablerMN．PhysRevs,1963 |
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