用射频磁控溅射法在Si(100)衬底上生长了一组Zn1-xMgxO(x=0～0.16)薄膜.并在不同温度下退火.对薄膜的光致发光研究表明,在薄膜的发射谱的紫外区域有分别对应自由激子(以及相应的声子伴线)和电子-空穴等离子体的发光机制,其中后者有5倍超线性的受激发射,其受激发射阈值与薄膜的退火温度相关,样品中最低受激阈值为40kW/cm2.
A series Zn1-xMgxO (x=0～0.16) films grown on Si(100) substrate were prepared by RF magnetron sputtering and annealed at different temperature. The UV emission peaks of free exciton (and assisted phonon replicas) and electron-hole plasma (E-H) were found in the photoluminescence (PL) from the Zn1-xMgxO films, where the E-H has a five-time super-linear enhanced lasing effect. The blue shift of the UV peaks in the photoluminescence spectra is found to be associated with increasing Mg content in Zn1-x Mgx O films, and the peaks intensity is also reinforced significantly as increasing the annealing temperature.The minimum lasing threshold of the samples is 40kW/cm2.
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