采用ECR微波等离子体增强化学气相沉积的方法于C1H2/H2/Ar2等离子环境中在单晶Si(111)晶面上制备了不同厚度的DLC膜样品,研究了薄膜的厚度随沉积时间的变化及薄膜的硬度、内应力随厚度的变化关系.结果表明,在沉积时间变化范围内,厚度与沉积时间基本呈线性关系,沉积速率可达80nm/min;制备态样品存在的内应力先随厚度增加而增加,当薄膜内应力超过某临界值时将通过表面崩裂达到应力松弛效果,XRD测得基底Si(111)峰位偏移先随厚度增加而增加,随后变化趋于平缓,表明薄膜表面崩裂后内应力维持在一定水平,但薄膜的硬度测量值受到表面崩裂程度影响.
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