材料期刊网

A novel physical sputtering kinetics model for reactive sputtering is presented. Reactive gas gettering effects and interactions among the characteristic parameters have been taken into account in the model. The data derived from the model accorded fairly well with experimental results. The relationship between the values of initial oxide coverage on the target and the ready states was depicted in the model. This relationship gives reasons for the difference of the threshold of reactive gas fluxes (Q*) from the metal sputtering region to the oxide sputtering region and in reverse direction. The discontinuities in oxide coverage on the target surface (theta) versus reactive gas fluxes (Q) are referred to as the effects of reactive gas partial pressure (p(r)) upon the forming rates of oxide on the surfaces of target (V-0). The diversity of the oxygen flux threshold results from the variance of the initial values of oxide coverage on target.