{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"用柱体旋转法测定了Ｂ_２Ｏ_３—ＭｇＯ—ＳｉＯ_２—Ａｌ２Ｏ_３—ＣａＯ系富硼镁渣的粘度及熔化性温度，用双柱联称法测定熔渣的密度及表面张力．实验结果表明：富硼镁渣的粘度及熔化性温度随渣中Ｂ_２Ｏ_３含量的增加而降低；当Ｂ_２Ｏ_３含量一定时，随渣中ＭｇＯ量及渣碱度的增加而增大．熔体的密度及表面张力随ＭｇＯ量增加或ＳｉＯ_２量减少而增大，分别为（２．５±０．５）ｔ·ｍ~（－３）和０．４－０．６Ｎ·ｍ~（－１）．","authors":[{"authorName":"崔传孟","id":"2447593b-d4d5-408b-8271-e1a77bc1a012","originalAuthorName":"崔传孟"},{"authorName":"徐秀光","id":"6395a519-0046-471a-a65a-d7fd10e224bd","originalAuthorName":"徐秀光"},{"authorName":"张显鹏","id":"0fcfa8f9-1cb0-4d77-b65c-f9c405cfd3fd","originalAuthorName":"张显鹏"},{"authorName":"王魁汉","id":"34e87ff8-41fb-49e1-9e30-ad2c6a64b0a8","originalAuthorName":"王魁汉"},{"authorName":"<span style=\"color:red\">韩</span><span style=\"color:red\">维</span><span style=\"color:red\">儒</span>","id":"e5c212d8-0ef9-439c-8f64-b020a100b681","originalAuthorName":"韩维儒"}],"categoryName":"|","doi":"","fpage":"637","id":"02cc4097-ccb8-4934-9aba-93e9a6555473","issue":"6","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"86b85e94-79ad-4c71-8bb8-5b4f14c44450","keyword":"富硼渣","originalKeyword":"富硼渣"},{"id":"328c0bd7-23bc-4517-bd57-42657213af57","keyword":" viscosity","originalKeyword":" viscosity"},{"id":"9bbbfe40-394b-44ea-8fbd-b2145e2bfebb","keyword":" density","originalKeyword":" density"},{"id":"684ff01b-a64f-428f-adfe-ca9f66f0a318","keyword":" surface tension","originalKeyword":" surface tension"}],"language":"zh","publisherId":"0412-1961_1996_6_5","title":"B_2O_3-MgO-SiO_2-Al_2O_3-CaO系渣组成对熔体物性的影响","volume":"32","year":"1996"},{"abstractinfo":"","authors":[],"doi":"","fpage":"673","id":"0dae0a5b-092e-4ed4-99f3-94b068fd2b7b","issue":"4","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"632e6ab9-1a07-4795-99b0-da7d23b8c84d","keyword":"","originalKeyword":""}],"language":"zh","publisherId":"xyjs200404054","title":"<span style=\"color:red\">韩</span>开发出高温超导电动机","volume":"28","year":"2004"},{"abstractinfo":"","authors":[{"authorName":"邰旃","id":"ebddf5e5-eff8-40ad-ae52-aa8bf26149b7","originalAuthorName":"邰旃"}],"doi":"10.3969/j.issn.1009-9964.2011.02.016","fpage":"48","id":"11afeb7c-1b3e-48a7-84f2-1baf4640ff42","issue":"2","journal":{"abbrevTitle":"TGYJZ","coverImgSrc":"journal/img/cover/TGYJZ.jpg","id":"60","issnPpub":"1009-9964","publisherId":"TGYJZ","title":"钛工业进展"},"keywords":[{"id":"e1cf8248-0b16-47ca-bb31-e764a02bb774","keyword":"","originalKeyword":""}],"language":"zh","publisherId":"tgyjz201102016","title":"法英<span style=\"color:red\">韩</span>三国钛业概况","volume":"28","year":"2011"},{"abstractinfo":"","authors":[{"authorName":"陈珊珊","id":"f2370837-1eec-486e-8ac2-67c977d63f7d","originalAuthorName":"陈珊珊"}],"doi":"10.3969/j.issn.1000-6826.2005.04.008","fpage":"16","id":"22434d5b-f88d-447e-8474-2cec4fe05d7f","issue":"4","journal":{"abbrevTitle":"JSSJ","coverImgSrc":"journal/img/cover/3abe017a-2574-4821-8152-4ae974ef0471.jpg","id":"47","issnPpub":"1000-6826","publisherId":"JSSJ","title":"金属世界"},"keywords":[{"id":"555818d1-77b9-414b-9580-84eb2251298d","keyword":"","originalKeyword":""}],"language":"zh","publisherId":"jssj200504008","title":"钢材巨量出口面临美<span style=\"color:red\">韩</span>反倾销","volume":"","year":"2005"},{"abstractinfo":"在 Ar气氛中,SiC粉末分别在 Fe、 Co、 Fe:Co(1:1)的催化下,经一步反应制备了一<span style=\"color:red\">维</span>、二<span style=\"color:red\">维</span>和三<span style=\"color:red\">维</span> Si基纳米线. SEM、 HRTEM、 EDX分析表明一<span style=\"color:red\">维</span>线状和二<span style=\"color:red\">维</span>网状 Si基纳米线由 C、 Si、 O组成,存在两类纳米线,一类是 SiOx包裹的 Si纳米线;另一类是 SiOx包裹的 SiC纳米线.三<span style=\"color:red\">维</span>Si基纳米线组成象花一样的结构,仅由 SiOx组成. SiOx和 Si是无定形结构,SiC是β-SiC单晶.","authors":[{"authorName":"胡卫兵","id":"7de595e8-28f9-40c0-a5e4-463e86ba31ed","originalAuthorName":"胡卫兵"},{"authorName":"史伯安","id":"20cb5f12-bf79-4631-b8e4-9a91b41a7de9","originalAuthorName":"史伯安"},{"authorName":"但悠梦","id":"e45ca5d4-a184-49a2-a0b8-c709bd886fe9","originalAuthorName":"但悠梦"},{"authorName":"谭志斗","id":"909ecd6c-55db-4011-858f-3e2136d392f1","originalAuthorName":"谭志斗"},{"authorName":"吴少尉","id":"a73d2855-d251-48b2-a8fc-07dccca01ab7","originalAuthorName":"吴少尉"},{"authorName":"朱艳秋","id":"d3d32db7-7791-4d44-b1ac-714dacaf93ea","originalAuthorName":"朱艳秋"},{"authorName":"徐文光","id":"daff398d-04c5-4158-b847-1dc7b968959a","originalAuthorName":"徐文光"}],"doi":"10.3969/j.issn.1007-4252.2003.03.011","fpage":"291","id":"10d9a803-4fda-49d2-877f-5958a498d9aa","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"e55d6150-ebe6-46e8-9b43-e434e97d1b66","keyword":"一<span style=\"color:red\">维</span>","originalKeyword":"一维"},{"id":"fdc616bb-0d90-420f-8091-0820464aa48a","keyword":"二<span style=\"color:red\">维</span>","originalKeyword":"二维"},{"id":"f7d8e458-efc2-41b0-910b-bdea52cc3c97","keyword":"三<span style=\"color:red\">维</span>","originalKeyword":"三维"},{"id":"3fb9057c-f3b9-4478-b76f-fbe5de475ff4","keyword":"Si基纳米线","originalKeyword":"Si基纳米线"},{"id":"51f360bd-fbfc-468f-9836-ed03550f37de","keyword":"制备","originalKeyword":"制备"}],"language":"zh","publisherId":"gnclyqjxb200303011","title":"一<span style=\"color:red\">维</span>,二<span style=\"color:red\">维</span>和三<span style=\"color:red\">维</span>Si基纳米线的制备","volume":"9","year":"2003"},{"abstractinfo":"主要论述了低<span style=\"color:red\">维</span>材料的制造方法、特异性能及在光电子和微电子器件领域的应用,包括介质超晶格、金属超晶格和一<span style=\"color:red\">维</span>量子线;介绍了我们分别采用激光分子束外延制备的BaTiO3/SrTiO3介质超晶格及其介电性能、直流磁控溅射法制备的强紫外光反射的Cu/Ti超晶格和宽禁带的一<span style=\"color:red\">维</span>ZnO量子线;描述了低<span style=\"color:red\">维</span>材料的发展前景.","authors":[{"authorName":"李燕","id":"33484987-3529-4f09-abc0-241f32b43448","originalAuthorName":"李燕"},{"authorName":"姜斌","id":"0ba76620-c8ff-43c1-b674-9a591eaf2e19","originalAuthorName":"姜斌"},{"authorName":"邓宏","id":"4e053ec0-2e4d-402c-999e-96b765855675","originalAuthorName":"邓宏"},{"authorName":"蒋书文","id":"3de14d63-d00d-4273-b2e4-22fb54482ca1","originalAuthorName":"蒋书文"},{"authorName":"周晓燕","id":"0e4b486d-41f2-49c5-91b2-1c696716662c","originalAuthorName":"周晓燕"}],"doi":"","fpage":"9","id":"2c9fecda-0f32-4f26-b606-077faa095121","issue":"3","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"4f5f7672-7177-478d-ae7c-ace04d0c4725","keyword":"低<span style=\"color:red\">维</span>材料","originalKeyword":"低维材料"},{"id":"56d10916-99e8-4d59-b437-f7023207e319","keyword":"介质超晶格","originalKeyword":"介质超晶格"},{"id":"515cb577-794c-4c4a-bbdc-09985d304522","keyword":"金属超晶格","originalKeyword":"金属超晶格"},{"id":"de1d411a-38ea-4d06-bd1c-366466b2631c","keyword":"ZnO量子线","originalKeyword":"ZnO量子线"}],"language":"zh","publisherId":"cldb200403004","title":"低<span style=\"color:red\">维</span>材料的研究","volume":"18","year":"2004"},{"abstractinfo":"本文综述了本实验室近年来在半导体低<span style=\"color:red\">维</span>材料制备和结构方面的一些进展,内容包括纳米线、纳米带、量子点、纳米固体的制备和结构特征、纳米线径向生长动力学和表面形貌稳定性.","authors":[{"authorName":"陈小龙","id":"1d542240-2aaf-47da-91ec-a86b2ceea35c","originalAuthorName":"陈小龙"}],"doi":"10.3969/j.issn.1000-985X.2002.03.013","fpage":"277","id":"05d50659-8dce-4661-9033-cabd47f2212c","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"9c8dc9a7-1bc4-4cca-b5ad-aecae2391ec8","keyword":"氮化镓低<span style=\"color:red\">维</span>材料","originalKeyword":"氮化镓低维材料"},{"id":"6ba7ca3a-715f-49a0-a128-151ff2d0d556","keyword":"生长动力学","originalKeyword":"生长动力学"},{"id":"7b003ab5-15a6-4ad7-b3ae-c0af9249a2e4","keyword":"形貌稳定性","originalKeyword":"形貌稳定性"}],"language":"zh","publisherId":"rgjtxb98200203013","title":"氮化镓低<span style=\"color:red\">维</span>材料","volume":"31","year":"2002"},{"abstractinfo":"一<span style=\"color:red\">维</span>狭缝光栅实现平面三<span style=\"color:red\">维</span>显示具有低成本、光栅参数易于改变和无需对焦的优点,但存在遮挡画面影响亮度的缺点;二<span style=\"color:red\">维</span>透镜阵列具有全视差且深度感知自然的优点,但存在显示像素低和观察视角小的缺点.为了同时兼顾上述两种方案的优点,结合一<span style=\"color:red\">维</span>狭缝光栅和二<span style=\"color:red\">维</span>透镜阵列提出了一种基于二<span style=\"color:red\">维</span>方孔光栅的平面立体显示方案.Lighttools软件仿真实验结果表明:基于二<span style=\"color:red\">维</span>方孔光栅的平面三<span style=\"color:red\">维</span>显示原理可行.其像质因子略小于一<span style=\"color:red\">维</span>狭缝光栅的像质因子,但继承了一<span style=\"color:red\">维</span>狭缝光栅和二<span style=\"color:red\">维</span>透镜的优点,是实现平面三<span style=\"color:red\">维</span>显示的一种新的发展方向.","authors":[{"authorName":"孔令胜","id":"5274db80-13d9-4c96-94cd-2695538458fa","originalAuthorName":"孔令胜"},{"authorName":"王天聪","id":"fe66fe03-811e-4937-bd38-40440d7cd09c","originalAuthorName":"王天聪"},{"authorName":"蔡盛","id":"759f6580-31de-4c2a-83b5-4489aeabb17d","originalAuthorName":"蔡盛"},{"authorName":"钟兴","id":"4879aeb0-2e89-406f-814c-26e9b84d1f8d","originalAuthorName":"钟兴"},{"authorName":"张雷","id":"d27de709-13fe-41fe-8849-f87b36d86050","originalAuthorName":"张雷"},{"authorName":"徐开","id":"4ecbd14c-6f3e-43dd-883c-9cfc46cfe25e","originalAuthorName":"徐开"},{"authorName":"金光","id":"42b752d2-7ec2-4745-8cce-c1794994d9e8","originalAuthorName":"金光"},{"authorName":"乔彦峰","id":"ac475a08-c46e-4243-97d6-bbb31275a417","originalAuthorName":"乔彦峰"},{"authorName":"贾继强","id":"543436c3-352d-465e-a8a3-dcfd4eaa3268","originalAuthorName":"贾继强"}],"doi":"10.3969/j.issn.1007-2780.2010.06.029","fpage":"919","id":"6cc56d2d-5e33-4fc6-a0ab-18ee98c60ba7","issue":"6","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"6423ad8c-d02f-472b-8ff1-2a22e930aa13","keyword":"平面三<span style=\"color:red\">维</span>显示","originalKeyword":"平面三维显示"},{"id":"2e51e449-c201-48c6-ba34-a75fd26ab1fb","keyword":"纵横视差","originalKeyword":"纵横视差"},{"id":"d353fac5-c846-4bad-9417-fc2f94c16702","keyword":"像质因子","originalKeyword":"像质因子"}],"language":"zh","publisherId":"yjyxs201006029","title":"基于二<span style=\"color:red\">维</span>方孔光栅的平面三<span style=\"color:red\">维</span>显示","volume":"25","year":"2010"},{"abstractinfo":"具有低<span style=\"color:red\">维</span>结构尤其是一<span style=\"color:red\">维</span>结构的物质往往具有较特殊或更优异的性质.本文研究了具有一<span style=\"color:red\">维</span>结构的发光物质的发光特性与微观结构之间的关系,得到了某些规律,即在一<span style=\"color:red\">维</span>结构中,只有存在相对较短的M-O键才可能引起电荷迁移产生发光;在该化合物中M应为变价元素且低价态具有发光性质;一<span style=\"color:red\">维</span>键上的能量传输往往具有很高的发光猝灭浓度和可能存在发光中间体.","authors":[{"authorName":"张雷","id":"de539fa1-1b75-486a-b668-5c1af4588323","originalAuthorName":"张雷"},{"authorName":"洪广言","id":"849e95fe-294a-45b8-856e-825288e803a7","originalAuthorName":"洪广言"}],"doi":"10.3969/j.issn.1000-985X.1999.02.018","fpage":"204","id":"268f3d2c-e4dc-4f35-9b75-165679063133","issue":"2","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"c5b73436-83ea-4e02-a3af-304ecb9b863b","keyword":"一<span style=\"color:red\">维</span>结构","originalKeyword":"一维结构"},{"id":"72f18f2c-2168-43ca-b274-145b701e83f1","keyword":"电荷迁移","originalKeyword":"电荷迁移"},{"id":"56104332-fe58-4629-b804-8cab36509439","keyword":"发光","originalKeyword":"发光"}],"language":"zh","publisherId":"rgjtxb98199902018","title":"一<span style=\"color:red\">维</span>结构中的发光特性","volume":"28","year":"1999"},{"abstractinfo":"采用混合数值方法对三<span style=\"color:red\">维</span>RIM充模过程进行了数值模拟,即在模腔宽度上采用有限元法,而在厚度方向上采用有限差分方法,对三<span style=\"color:red\">维</span>问题进行求解.采用这种方法,避开了直接求取三<span style=\"color:red\">维</span>有限元所带来的困难.同时采用了任意拉格朗日-欧拉法处理流动前缘.文中对数值结果进行了讨论.","authors":[{"authorName":"任世杰","id":"6bceb4be-d6b6-4bd3-a165-040bccf39767","originalAuthorName":"任世杰"},{"authorName":"戴干策","id":"6e64999a-27ee-4a3a-bac2-1b47386e0ebb","originalAuthorName":"戴干策"}],"doi":"","fpage":"5","id":"4613da35-5af6-437b-a535-484f350f6dd2","issue":"5","journal":{"abbrevTitle":"GFZCLKXYGC","coverImgSrc":"journal/img/cover/GFZCLKXYGC.jpg","id":"31","issnPpub":"1000-7555","publisherId":"GFZCLKXYGC","title":"高分子材料科学与工程"},"keywords":[{"id":"b75e9502-1a0a-4a3e-99e1-d0c1861626b5","keyword":"反应注射成型","originalKeyword":"反应注射成型"},{"id":"78068f14-2bfc-4e43-8b09-7122d810fadb","keyword":"充模","originalKeyword":"充模"},{"id":"25f6ed77-e701-4571-afb3-cd6036389852","keyword":"数值模拟","originalKeyword":"数值模拟"}],"language":"zh","publisherId":"gfzclkxygc199905002","title":"三<span style=\"color:red\">维</span>RIM充模模拟","volume":"15","year":"1999"}],"totalpage":796,"totalrecord":7957}