Lanthanum doped bismuth titanate (Bi(3.5)La(0.5)Ti(3)O(12), BLT-5) thin films were prepared by sol-gel method. Polycrystalline BLT-5 thin films could be obtained at annealing temperatures of 600similar to650 degreesC. The typical coercive electric field (E) and remnant polarization (P,) for the BLT-5 thin film annealed at 650degreesC were E(C)=67 kV/cm, P(r) =11.2 mu C/cm(2), respectively. BLT-5 thin film shows good fatigue-free property.
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