基底负偏压对直流磁控溅射CrN薄膜择优取向及表面形貌的影响

功能材料, 2010, 41(6): 1015-1018.

基底负偏压对直流磁控溅射CrN薄膜择优取向及表面形貌的影响

谈淑咏 ^1, , 张旭海 ^2, , 李纪宏 ^3, , 吴湘君 ^4, , 蒋建清 ^5,

1.东南大学,材料科学与工程学院,江苏省先进金属材料高技术研究重点实验室,江苏,南京,211189

2.东南大学,材料科学与工程学院,江苏省先进金属材料高技术研究重点实验室,江苏,南京,211189

3.东南大学,材料科学与工程学院,江苏省先进金属材料高技术研究重点实验室,江苏,南京,211189

4.东南大学,材料科学与工程学院,江苏省先进金属材料高技术研究重点实验室,江苏,南京,211189

5.东南大学,材料科学与工程学院,江苏省先进金属材料高技术研究重点实验室,江苏,南京,211189

基金项目: 国家科技支撑计划资助项目(2007BAE15B05)

关键词：基底负偏压 , 择优生长 , 表面形貌 , 直流磁控溅射

Effects of substrate negative bias voltages on preferred orientation and surface morphology of CrN films deposited by DC reactive magnetron sputtering

直流磁控溅射法制备不同基底负偏压下的CrN薄膜,采用XRD分析薄膜相结构,EDS分析薄膜表面成分,SEM观察薄膜表面形貌,并对偏压作用机制进行了探讨.结果表明,当Ar流量6ml/min、N2流量30ml/min时,在基底负偏压增大过程中,CrN薄膜始终由CrN相组成,但薄膜生长发生了(111)(-50V)向(200)(-125V)再向无明显择优生长(-225V)的转变.低偏压时,CrN薄膜[111]向[200]取向转变主要是轰击表面氮离子浓度增加导致;高偏压时,薄膜中Ar浓度大幅增长,高能离子长时间轰击破坏晶粒取向性,使薄膜呈无择优取向.同时,负偏压增加使薄膜表面形貌从具有棱角的不规则形状逐渐变为粒状结构,且晶粒逐渐细小.

参考文献

[1]	Hurkmans T;Lewis D B;Paritong H.[J].Surface and Coatings Technology,1999(52):114.
[2]	Piot O;Machet J.[J].Materials Science Forum,1998(539):287-288.
[3]	Cunha L;Andritschky M;Pischow K.[J].Thin Solid Films,1999(465):355-356.
[4]	Schell N.;Petersen JH.;Bottiger J.;Mucklich A.;Chevallier J. Andreasen KP.;Eichhorn F. .On the development of texture during growth of magnetron-sputtered CrN[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):100-110.
[5]	Lee JW;Tien SK;Kuo YC;Chen CM .The mechanical properties evaluation of the CrN coatings deposited by the pulsed DC reactive magnetron sputtering[J].Surface & Coatings Technology,2006(10):3330-3335.
[6]	Rong, SQ;He, J;Wang, HJ;Tian, CX;Guo, LP;Fu, DJ .Effects of Bias Voltage on the Structure and Mechanical Properties of Thick CrN Coatings Deposited by Mid-Frequency Magnetron Sputtering[J].Plasma Science & Technology,2009(1):38-41.
[7]	Pathways of atomistic processes on TiN(001) and (111) surfaces during film growth: an ab initio study[J].Journal of Applied Physics,2003(11):9086-9094.
[8]	Matsue T.;Hanabusa T.;Ikeuchi Y. .The structure of TiN films deposited by arc ion plating[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2002(3/4):435-439.
[9]	Kang T.W.;Kim T.W. .Structural properties of TiN films grown on stainless steel substrates by a reactive radio-frequency sputtering technique at low temperature[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1999(1):190-194.
[10]	Zlatanovic M;Popovic N;Bogdanov Z.[J].Thin Solid Films,1998(317):463-467.
[11]	Wang Q M;Kim K H .[J].Journal of Vacuum Science and Technology A:Vacuum Surfaces and Films,2008,26(05):1267-1276.

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