For the high temperature coefficient of resistivity (TCR) of Vox thin films, the preparation process including the heat-treating and the application of seed layer, has been investigated. When the films were prepared without a seed layer,heated in air for 2 h, and then in N2 for 2 h at 470℃, the TCR of about 1.07% K-1 (3.75% K-1 at 45℃～65℃) was gained. The R20℃/R100℃ was about 28.75, while the R20℃/R100℃ of the thin films prepared on a seed layer was 5.5. The X-ray diffraction (XRD) showed that better heating conditions led to less phase compositions and higher V2O5 diffraction peak, which led to higher TCR. The experiment results showed that the optimum heating condition was at 470℃ for 4 h.
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