用传统固相烧结工艺,制备了纯相的Bi4Ti3O12 (BTO)陶瓷,A位掺杂的Bi3.25La0.75Ti3O12(BLT),Bi3.15Nd0.85Ti3O12(BNdT)铁电陶瓷.X射线衍射结果表明,所有样品均为单一的层状钙钛矿结构,La、Nd掺杂未改变BTO的晶体结构.铁电测试结果表明,BTO、BLT和BNdT陶瓷的剩余极化2Pr值分别为12.4、23.8和39.4μC/cm2.A位掺杂后,BLT、BNdT的2Pr值比未掺杂的BTO分别提高了1.92和3.18倍.漏电流测试表明,BLT、BNdT陶瓷的漏电流密度比BTO明显降低.A位掺杂显著提高了BTO陶瓷的铁电性能.
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