掺杂ZnO薄膜研究

功能材料, 2004, 35(z1): 157-159.

1.云南大学,材料科学与工程系,云南,昆明,650091

2.云南大学,材料科学与工程系,云南,昆明,650091

3.云南大学,材料科学与工程系,云南,昆明,650091

基金项目: 云南省教育厅资助项目(0112154)

Research of doped ZnO thin films

采用电子束蒸发方法在玻璃衬底上制备ZnO薄膜和掺杂ZnO薄膜.通过X射线衍射、台阶仪及Hall效应等测试研究了衬底温度和掺杂对晶体质量和电学性能的影响,发现原位生长的ZnO薄沿c轴择优生长,且掺杂ZnO薄膜具有低达3.029×10-4Ω·cm的电阻率.

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