利用硅胶吸附--解吸臭氧原理自制了臭氧浓缩装置, 通过此装置制备的高浓度臭氧作为分子束外延制备Bi系氧化物薄膜的氧化源. 在臭氧浓缩装置中, 硅胶温度保持在-85℃左右, 工作6 h, 可获得浓度(摩尔分数)高于95%的臭氧. 当臭氧浓缩装置中压强保持在1.3×10 3 Pa, 该臭氧浓度可维持5 h以上. X射线衍射结果表明, 制备的高浓度臭氧在高真空条件下可将Cu氧化成CuO, 并以此为氧化源利用分子束外延在MgO(100)衬底上制备了较高质量的 Bi2Sr2CuO6+x和Bi2Sr2CaCu2O8+x薄膜.
A homemade ozone concentrating apparatus was devised and prepared, and the high-concentration ozone was prepared as oxide source for the preparation of Bi-based oxide thin films by molecular beam epitaxy. Silica gel was used to adsorb ozone which was made by ozone generator, and ozone with the concentration about 95 mol% can be obtained when the silica gel was kept at about -85℃ for 6 hours. And the concentration of ozone can be kept over 5 hours when the pressure of concentrating apparatus was kept at 1.3×103Pa. The X-ray diffraction patterns demonstrated that the high-concentration ozone gotten by the ozone concentrating apparatus can oxidize Cu to CuO in high vacuum. Furthermore, the oxide source was good enough to prepare high quality Bi2Sr2CuO6+x and Bi2Sr2CaCu2O8＋x thin films on the MgO(100) substrates by molecular beam epitaxy.
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