本文根据高价态差掺杂原理,采用常压烧结技术制备了低电阻率的W-Ti共掺杂ZnO陶瓷靶材（WTZO）,并研究了烧结温度及烧结气氛对靶材特性的影响。结果表明：当烧结温度为1200℃时,WTZO靶材的特性较好。随着烧结温度的升高,WTZO靶材的相对致密度先快速增大后缓慢减小,方块电阻先降低后升高。烧结气氛对WTZO靶材特性的影响显著,烧结气氛为空气时,靶材的方块电阻为12.18Ω/□,相对致密度为94.3%;当烧结气氛为高纯Ar气时,靶材的方块电阻为1.253Ω/□,相对致密度为96.7%。
To obtain low resistivity targets, W and Ti co-doped ZnO targets （WTZO） were prepared by pressure-less sintering technique. It based on the theory of high valence difference between dopant and ion substituted. Meanwhile, the influence of sintering temperature and atmosphere on the properties of WTZO targets were investigated in detail. It is indicated that the properties of WTZO targets are better when they are sintered at 1200℃. With the increase of temperature, the relative density of WTZO targets increases rapidly and thin decreases slowly, while the sheet resistance decreases and then increases slowly. In addition, sintering atmosphere makes a great inference on the properties of WTZO targets. When the sintering atmosphere is air, the WTZO targets with sheet resistance, Rs 12. 18Ω/□ and relative density, RD-94. 3% were gained. Typical performances of WTZO targets obtained in argon gas： sheet resistance, Rs-1. 253Ω/□ and relative density, RD-96. 7%.
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