氨化Si基Ga2O3/In制备GaN薄膜

功能材料, 2007, 38(2): 231-233.

氨化Si基Ga2O3/In制备GaN薄膜

王福学 ^1, , 薛成山 ^2, , 庄惠照 ^3, , 张晓凯 ^4, , 艾玉杰 ^5, , 孙丽丽 ^6, , 杨兆柱 ^7, , 李红 ^8,

1.山东师范大学,半导体所,山东,济南,250014

2.山东师范大学,半导体所,山东,济南,250014

3.山东师范大学,半导体所,山东,济南,250014

4.山东师范大学,半导体所,山东,济南,250014

5.山东师范大学,半导体所,山东,济南,250014

6.山东师范大学,半导体所,山东,济南,250014

7.山东师范大学,半导体所,山东,济南,250014

8.山东师范大学,半导体所,山东,济南,250014

基金项目: 国家自然科学基金(90201025;90301002)

关键词： GaN , Ga2O3/In , 氨化 , 磁控溅射

Formation of GaN film by ammoniating Ga2O3 film on in layer deposited on Si(111) substrates

研究了Ga2O3/In 膜反应自组装制备GaN薄膜,再将Ga2O3/In膜在高纯氨气气氛中氨化反应得到GaN薄膜,用X射线衍射(XRD),傅里叶红外吸收(FTIR),扫描电镜(SEM),原子力显微镜(AFM),透射电镜(TEM)对样品进行结构,形貌的分析.测试结果表明:用此方法得到了六方纤锌矿结构的GaN多晶膜,且900℃时成膜的质量最好.

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氨化Si基Ga2O3/In制备GaN薄膜

Formation of GaN film by ammoniating Ga2O3 film on in layer deposited on Si(111) substrates

参考文献