采用叠轧-合金化法制备Au-20Sn钎料,研究合金化退火工艺对Au-20Sn钎料显微组织的影响。结果表明：Au/Sn界面在叠轧过程中形成AuSn4,AuSn2和AuSn三个金属间化合物（IMC）层。在200℃退火时,IMC层的厚度随退火时间的延长而逐渐增大。当退火时间延长至48 h时,IMC层发生转变,Au-20Sn钎料最终形成由ζ相（含Sn 10%～18.5%,原子分数）和δ（AuSn）相组成的均质合金。在250℃退火时,Au/Sn界面扩散速度增大,退火6 h后Au-20Sn钎料组织完全转变成ζ相＋δ（AuSn）相。在270℃退火时,IMC层熔化,反应界面转变成为固-液界面,Au-20Sn钎料组织转变为脆性的（ζ＇＋δ）共晶组织。综合Au-20Sn钎料的性能和生产要求,得到优先退火工艺为250℃退火6 h。
AuSn solder was prepared by rolling-annealing process. The effects of annealing process on microstructure of the Au-20Sn solder were investigated. The results show that three intermetallie compound （IMC） layers of AuSn4 ,AuSn2 and AuSn are formed at the Au/Sn interface during rolling process. When annealing at 200℃, the IMC layers grow gradually with increase of annealing time. After annealing at 200 ℃ for 48 h, the IMC layers are fully transformed into E-phase（ containing Sn of 10% - 18.5% , mole fraction） and 8- phase（AuSn） , forming a homogeneous and stable Au-20Sn solder. When annealing at 250℃ , the IMC layers grow much faster than that at 200 ℃. The IMC layers are fully transformed into E-phase and 8-phase after annealing for 6 h. When Au-20Sn solder is annealled at 270℃ , the IMC layers is molten and the Au/Sn interface becomes solid-liquid state,and brittle （＋ δ） eutectic microstructure forms in the Au-20Sn solder. The optimal annealing technology of the Au-20Sn solder is annealing at 250℃ for 6 h to obtain the best properties for application in engineering.
参考文献
| [1] | Jeong-Won Yoon;Seung-Boo Jung .Investigation of interfacial reaction between Au-Sn solder and Kovar for hermetic sealing application[J].Microelectronic engineering,2007(11):2634-2639. |
| [2] | Chung H M;Chen C M;Lin C P et al.Microstructure evolution of the Au-20wt% Sn solder on the Cu substrate during reflow[J].Journal of Alloys and Compounds,2009,485:219-224. |
| [3] | 周涛,汤姆·鲍勃,马丁·奥德,贾松良.金锡焊料及其在电子器件封装领域中的应用[J].电子与封装,2005(08):5-8. |
| [4] | 刘泽光,陈登权,罗锡明,许昆.微电子封装用金锡合金钎料[J].贵金属,2005(01):62-65. |
| [5] | 罗雁波,谢宏潮,李敏.金锡合金钎料研究现状[J].有色金属,2002(z1):23-26. |
| [6] | 刘泽光,陈登权,许昆,罗锡明,陈亮维.D-KH法制备金锡合金的组织与结构[J].贵金属,2005(03):30-33. |
| [7] | 刘泽光;罗锡明;陈登权 .金锡共晶合金箔带材制造方法[P].中国,03105811.6,2003-7-25. |
| [8] | T. Yamada;K. Miura;M. Kajihara .Kinetics of reactive diffusion between Au and Sn during annealing at solid-state temperatures[J].Materials Science & Engineering, A. Structural Materials: Properties, Misrostructure and Processing,2005(1/2):118-126. |
| [9] | Tang W M;He A Q;Qi Liu et al.Room temperature interfacial reactions in electrodeposited Au/Sn couples [J~[J].Acta Materialia,2008,56:5818-5827. |
| [10] | M. L. Huang;Y. Liu;J. X. Gao .Interfacial reaction between Au and Sn films electroplated for LED bumps[J].Journal of Materials Science. Materials in Electronics,2011(2):193-199. |
| [11] | Yoon J W;Noh B I;Jung S B .Interracial reaction between Au-Sn solder and Au/Ni-metallized Kovar[J].Journal of Materials Science:Materials in Electronics,2011,22:84-90. |
| [12] | Ciulik J;Notis M R .The Au-Sn phase diagram[J].Journal of Alloys and Compounds,1993,191(01):71-78. |
| [13] | 陈松,刘泽光,陈登权,罗锡明,许昆,邓德国.Au/Sn界面互扩散特征[J].稀有金属,2005(04):413-417. |
| [14] | Laurila T;Vuorinen V;Kivilahti JK .Interfacial reactions between lead-free solders and common base materials[J].Materials Science & Engineering, R. Reports: A Review Journal,2005(1/2):1-60. |
| [15] | Lee T K;Zhang S;Wong C C et al.InterfaciaI microstructures and kinetics of Au/SnAgCu[J].Thin Solid Films,2006,504:441-445. |
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