水热法制备Ge/SiOx纳米电缆

功能材料, 2008, 39(6): 1027-1029.

水热法制备Ge/SiOx纳米电缆

袁媛 ^1, , 唐元洪 ^2, , 李晓川 ^3, , 林良武 ^4, , 谭艳 ^5,

1.湖南大学,材料科学与工程学院,湖南,长沙,410082

2.湖南大学,材料科学与工程学院,湖南,长沙,410082

3.湖南大学,材料科学与工程学院,湖南,长沙,410082

4.湖南大学,材料科学与工程学院,湖南,长沙,410082

5.湖南大学,材料科学与工程学院,湖南,长沙,410082

基金项目: 高等学校博士学科点专项科研项目(20040532014)

关键词：纳米电缆 , 锗 , 硅 , 水热法 , 表征

Synthesis of Ge/SiOx nanocables by hyrothermal method

以混合的氧化锗粉和硅粉为原料,采用水热法在高温高压下制备出具有核-壳同轴结构的Ge/SiOx纳米电缆.扫描和透射电镜研究表明这种Ge/SiOx纳米同轴电缆的产量高,直径分布均匀,长度可达微米级,并证实其为非晶态SiOx包裹Ge内核的核-壳结构.Ge芯线沿着[211]方向生长.Ge/SiOx纳米同轴电缆的生长过程遵循气-液-固和氧化物辅助生长机制,与原料中GeO2与Si的比率有关.

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水热法制备Ge/SiOx纳米电缆

Synthesis of Ge/SiOx nanocables by hyrothermal method

参考文献