利用溶胶凝胶工艺在Pt电极上沉积了PZT薄膜,选用传统退火及其快速退火工艺制备两种Pt基底(CTA-Pt和RTA-Pt),并采用X射线衍射广角及其ù扫描技术分别研究了Pt电极退火工艺对溶胶凝胶PZT结构及其织构演化的影响.研究结果显示:在传统退火工艺制备Pt电极上沉积的薄膜为(111)择优取向,而在快速退火工艺制备Pt电极上沉积的薄膜表现为(100)织构;分析表明PZT薄膜的织构演化可能与Pt电极在不同退火工艺下的内应力差异有关.
Lead zirconate titanate(PZT) films were fabricated by sol-gel technique on different Pt electrode layers,i.e.,CTA-Pt and RTA-Pt,which were subjcoted to conventional thermal annealing and rapid thermal annealing,respectively.The microstructures and phase compositions of sol-gel-derived PZT films were analyzed.Effects of Pt electrode subjected to different annealing processing on the texture of PZT films were investigated by using ù-scan X-ray diffraction.The results indicated that the PZT thin films on CTA-Pt electrode were(111)-textured for various annealing temperatures,whereas the PZT films on the RTA-Pt electrode were(100)-textured.A possible scheme in consideration of the internal stress effect of Pt electrode was proposed to explain the texture evolution of films.
参考文献
[1] | Lan YF;Guo TY;Chang JC;Chang WL;He JL .Thermionic electron emission enhancement of PZT thin films sputter deposition[J].Surface & Coatings Technology,2005(5/6):1629-1634. |
[2] | Scott J F;Araujo C A .[J].Science,1989,246:1400. |
[3] | Haertling G H .[J].Journal of the American Ceramic Society,1999,82:797. |
[4] | Wang F.;Leppavuori S. .PROPERTIES OF EPITAXIAL FERROELECTRIC PBZR0.56TI0.44O3 HETEROSTRUCTURES WITH LA0.5SR0.5COO3 METALLIC OXIDE ELECTRODES[J].Journal of Applied Physics,1997(3):1293-1298. |
[5] | Kim S T;Kim H H;Lee M Y et al.[J].Japanese Journal of Applied Physics,1997,36:294. |
[6] | Meng X J;Cheng J G;Sun JL et al.[J].Thin Solid Films,2000,368(01):22. |
[7] | Willems G J;Wouters D J;Maes H E .[J].Microelectronic Engineering,1995,29:217. |
[8] | Sreenivas K;Reaney I;Maeder T et al.[J].Journal of Applied Physics,1994,75:232. |
[9] | Niwa K;Kotoka Y;Tomotani M et al.[J].Acta Materialia,2000,48:4755. |
[10] | Huang W;Jiang SW;Li YR;Zhu J;Zhang Y;Wei XH;Zeng HZ .Crystallization behavior and domain structure in textured Pb(Zr0.52Ti0.48)O-3 thin films by different annealing processes[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(1/2):138-143. |
[11] | Vilquin B.;Le Rhun G.;Bouregba R.;Poullain G.;Murray H. .Effect of in situ Pt bottom electrode deposition and of Pt top electrode preparation on PZT thin films properties[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2002(1/4):63-73. |
[12] | Velu G;Remiens D .[J].Journal of the European Ceramic Society,1999,19:2005. |
[13] | Wu W B;Wong K H;Zhang Y H .[J].Applied Physics Letters,2000,77:3441. |
[14] | Ramesh R;Gichrist H;Sands T .[J].Applied Physics Letters,1993,63:3592. |
[15] | Qin HX.;Jin ZQ.;Wang Y.;Zhu JS. .PZT thin films with preferred-orientation induced by external stress[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(1/2):72-75. |
[16] | Delobelle P;Wang GS;Fribourg-Blanc E;Remiens D .Mechanical properties measured by nano-indentation of Pb(Zr, Ti)0(3) sol-gel films deposited on Pt and LaNi0(3) electrodes[J].Surface & Coatings Technology,2006(6):3155-3162. |
[17] | Vaudin M D;Rupich M W et al.[J].Journal of Materials Research,1998,13:2910. |
[18] | Yang F;Wang L;Zheng F;Fei WD .Crystallization behavior of PZT film prepared by sol-gel route[J].Journal of Materials Science,2006(18):5820-5827. |
[19] | Seabaugh M M;Vaudin M D;Cline J P et al.[J].Journal of the American Ceramic Society,2000,83(08):2049. |
[20] | Yang F;Fei W D .[J].Key Engineering Materials,2005,280-283:857. |
- 下载量()
- 访问量()
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%