为了生长大晶粒的多晶硅铸锭,晶体从形核到后续生长的热场环境控制至关重要.本文首先在侧加热器与散热块之间加一可移动的隔热环.通过向上移动隔热环,并在底部喷射氩气冷却,对生长工艺进行优化控制.然后利用数值模拟,对改进后的生长界面形状、晶体和熔体中的等温线、晶体和熔体的轴向温度分布以及冷却量对生长环境的影响进行分析.模拟结果表明:冷却速率的最佳值在5 ～ 15 W/m2之间,且优化后的晶体和熔体中等温线更平坦,晶体轴向温度梯度增大约1.72 K/cm,从而可有效地避免侧壁形核,促进大晶粒的生长,同时提高了生长速率.
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