先采用0.3 mol/L草酸溶液在0℃、8.9 mA/cm2下对纯铝板进行二次阳极氧化,制得氧化铝多孔膜(AAO),随后以AAO为模板,采用直流电沉积法制得Bi2Te3纳米线阵列.镀液组成和工艺条件为:Bi3+0.0075 mol/L,HTeO,+0.00125 mol/L,NO3-1 mol/L,温度0℃,pH 0.1,时间2h.研究了沉积电位对沉积过程的电流变化以及纳米线的Te含量、形貌和结构的影响,得到最佳沉积电位为1.4 V.在1.4 V下沉积所得纳米线结构致密、连续,孔径约为90 nm,与AAO的孔径一致.
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