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采用可变入射角全自动椭圆偏振光谱仪,在能量2.0~4.0 eV范围内测量了磁控溅射法制备的金属Mn膜的光学常数,分析了氩气流量对Mn膜光学性质的影响.结果表明,在低能区,随Ar流量的增加,薄膜的所有光学常数均有不同程度的降低;而在高能区,流量对光学常数的影响不明显.薄膜复介电常数、折射率n随流量增大不断减小,在流量为15 mL/min后变化不明显;而消光系数k在流量为15~20 mL/min没有明显变化,在流量达到25 mL/min后消光系数显著减小.

参考文献

[1] 杨君玲,陈诺夫,刘志凯,杨少延,柴春林,廖梅勇,何宏家.离子束外延生长半导体性锰硅化合物[J].半导体学报,2001(11):1429-1433.
[2] Lange H .Electronic properties of semiconducting silicides[J].Physica Status Solidi B,1997,201(01):3.
[3] 崔教林,赵新兵.p-型FeSi2/Bi2Te3梯度热电材料的优值推证与界面温度优化[J].稀有金属材料与工程,2002(02):118-121.
[4] 刘晓虎,赵新兵,倪华良,陈海燕.快速凝固和热压高锰硅的微观结构和热电性能[J].功能材料与器件学报,2004(02):231-235.
[5] Q. R. Hou;W. Zhao;H. Y. Zhang;Y. B. Chen;Y. J. He .Thermoelectric properties of higher manganese silicide films with addition of carbon[J].Physica Status Solidi, A. Applied Research,2006(10):2468-2477.
[6] Kawsumi I;Sakata M;Nishida I et al.Crystal growth of manganese silicide MnSi1.73 and semiconducting properties of Mn15Si26[J].Journal of Materials Science,1981,16(02):355.
[7] Migas DB;Shaposhnikov VL;Filonov AB;Borisenko VE;Dorozhkin NN .Ab initio study of the band structures of different phases of higher manganese silicides[J].Physical review, B. Condensed matter and materials physics,2008(7):075205-1-075205-9-0.
[8] T. S. Kamilov;A. Zh. Khusanov;M. K. Bakhadyrkhanov;D. K. Kobilov .Nonselective polycrystalline radiation detectors based on higher manganese silicides[J].Technical physics letters: Letters to the Russian journal of applied physics,2002(11):929-931.
[9] Kamilov T S;Uzokov A A;Kobilov D K.Development of thermoelectric on the basis of higher manganese silicides films[A].Juan-Les-Pins,France,2003:384.
[10] Aovamal I.The effect of Ge doping on p-type higher manganese silicides(HMS)[A].California,2002
[11] Q. R. HOU;D. LIANG;X. FENG;W. ZHAO;Y. B. CHEN;Y. J. HE .THERMOELECTRIC PROPERTIES OF MnSi_(1.7) FILMS WITH ADDITION OF ALUMINUM AND CARBON[J].Modern Physics Letters, B. Condensed Matter Physics, Statistical Physics, Applied Physics,2007(22):1447-1460.
[12] Q. R. Hou;W. Zhao;Y. B. Chen;Y. J. He .Thermoelectric power of nanoscale MnSi_(1.7) films[J].Physica Status Solidi, A. Applied Research,2008(11):2687-2694.
[13] Kakubo K;Kimura Y;Mishima Y .Microstructures and thermoelectric power of the higher manganese silicide alloys[J].Materials Research Society,2000,646:N2.9,1.
[14] Zhang L;Ivey D G .Reaction kinetics and optical properties of semiconducting MnSi1.73 grown on(001) oriented silicon[J].Journal of Materials Science: Materials in Electronics,1991,2(02):116.
[15] Zhang L;Ivey D G .Low temperature reactions of thin layers of Mn with Si[J].Journal of Materials Research,1991,6(07):1518.
[16] 谢二庆,王文武,姜宁,贺德衍.锰硅化物的固相反应生长研究[J].物理学报,2002(04):873-876.
[17] 罗文辉,李涵,林泽冰,唐新峰.Si含量对高锰硅化合物相组成及热电性能的影响研究[J].物理学报,2010(12):8783-8788.
[18] Azzam R M.Ellipsometry and polarized light[M].Amsterdam:Elsevier Science Publishing Co.Inc,1987
[19] 周毅,吴国松,代伟,李洪波,汪爱英.椭偏与光度法联用精确测定吸收薄膜的光学常数与厚度[J].物理学报,2010(04):2356-2363.
[20] Aspnes D E;Theeten J B;Hottier F .Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry[J].Physical Review B: Condensed Matter,1979,20:3292.
[21] 李新利,谷锦华,高海波,陈永生,郜小勇,杨仕娥,卢景霄,李瑞,焦岳超.椭圆偏振光谱实时在线监测与离线分析微晶硅薄膜的生长[J].物理学报,2012(03):398-404.
[22] Aspros D E;Serphin B.Optical properties of solids:New development[M].Amsterdam:North-Holland,1976:15.
[23] Cheng YH;Chen XL;Wu K;Wu SN;Chen Y;Meng YM .Modeling and simulation for effective permittivity of two-phase disordered composites[J].Journal of Applied Physics,2008(3):34111-1-34111-8-0.
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