AlN薄膜的KrF准分子脉冲激光沉积

功能材料, 2005, 36(12): 1831-1836.

1.华东师范大学,信息学院,上海,200062

2.中国科学院上海微系统与信息技术研究所,上海,200050

3.华东师范大学,信息学院,上海,200062

4.华东师范大学,信息学院,上海,200062

5.中国科学院上海微系统与信息技术研究所,上海,200050

基金项目: 科技部科研项目(G2000036506)

Pulsed KrF excimer laser deposition of AlN thin films

研究了采用脉冲激光沉积(PLD)技术在Si(100)衬底上AlN薄膜的制备及其性质.结果表明,衬底温度从室温到800℃的范围内,所得到的AlN薄膜为(002)择优取向的纤锌矿结构.随着衬底温度的升高,AlN薄膜从纳米晶结构转为多晶结构,同时表面微粗糙度上升.AlN晶粒呈柱状生长机制.

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