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利用直流反应磁控溅射法在表面覆盖有Si3N4薄膜的Si(100)基片上制备了不同厚度的氧化钒薄膜.用光谱式椭偏仪对薄膜的厚度进行了测试.采用四探针测试系统对制备的薄膜进行了方阻和方阻温度系数的分析,发现薄膜的厚度对薄膜的电学特性有很大的影响.实验结果表明氧化钒薄膜的厚度调整可作为调控氧化钒薄膜性能的一种重要工艺手段.

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