溶胶-凝胶法制备低折射率和低介电常数介孔二氧化硅薄膜

稀有金属材料与工程, 2008, 37(z2): 76-79.

溶胶-凝胶法制备低折射率和低介电常数介孔二氧化硅薄膜

沈军 ^1, , 欧阳玲 ^2, , 林雪晶 ^3, , 谢志勇 ^4, , 罗爱云 ^5,

1.同济大学,波耳固体物理研究所,上海,200092

2.同济大学,波耳固体物理研究所,上海,200092

3.同济大学,波耳固体物理研究所,上海,200092

4.同济大学,波耳固体物理研究所,上海,200092

5.同济大学,波耳固体物理研究所,上海,200092

基金项目: Shanghai Key Subject Program,Shanghai Phosphor Program(05QMH1413) Chinese National Foundation of High Technology(2002AA842052) 国家自然科学基金(20133040;69978017;50572073) Trans-Century Training Program Foundation for the Talents by Ministry of Education of People's Republic of China

关键词：介孔薄膜 , 溶胶-凝胶 , 低折射率 , 低介电常数

Preparation of Low-k and Low-n Mesoporous Silica Films via Sol-Gel Process

Shen Jun ^1, , Ouyang Ling ^2, , Lin Xuejing ^3, , Xie Zhiyong ^4, , Luo Aiyun ^5,

1.同济大学,波耳固体物理研究所,上海,200092

2.同济大学,波耳固体物理研究所,上海,200092

3.同济大学,波耳固体物理研究所,上海,200092

4.同济大学,波耳固体物理研究所,上海,200092

5.同济大学,波耳固体物理研究所,上海,200092

Keywords： mesoporous films , sol-gel , low dielectric constant , low refractive index

采用溶胶-凝胶技术,蒸发诱导自组装法(EISA)工艺制备了二氧化硅透明有序介孔薄膜.以十六烷基三甲基溴化铵(CTAB)作为模板剂,正硅酸乙酯(TEOS)为硅源前驱体,基片采用双面抛光的硅片,利用提拉法制备薄膜.经过表面修饰剂六甲基二硅胺烷(HMDS)修饰后,薄膜具有疏水性能,而且薄膜的二氧化硅骨架结构更稳定.由椭偏仪测得热处理后的薄膜的折射率低至1.18,而薄膜的介电常数为2.14.

Mesopomus silica films were successfully prepared through sol-gel process with evaporation-induced self-assembly.Tetraethoxysilane(TEOS)was used as silica precursor and Cetyltrimethylammonium bromide(CTAB)as the templating agent.The films were deposited on the silicon wafer or glass substrate using a dip-coating method.The refractive index(k)of the mesoporous films was 1.18,while the dielectric constant(n)was 2.14.

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