为了降低液硅渗透法制备C／C—SiC复合材料中残留Si的含量，采用浆料浸渗结合液硅渗透工艺制备B12（C，Si，B）3改性C／C—SiC复合材料。通过分析不同比例B4C—Si体系在不同温度的反应产物，确定了B12（C，Si，B）3的生成条件。结果表明：B4C和Si在1300℃开始反应，生成少量B12（C，Si，B）3和SiC，且B12（C，Si，B）3的生成量随反应温度的升高而增加；当B4C和Si的摩尔比为3：1、反应温度为1500℃时，产物为B12（C，Si，B）3和SiC液硅渗透法制备的C／C—SiC复合材料相组成为非晶态C、β-SiC和B12（C，Si，B）3，未见残留Si。
In order to reduce the content of residual Si generated in the process of liquid silicon infiltration, B12 (C, Si, B)3 modified C/C - SiC composite was prepared by a joint process of slurry impregnation and liquid silicon infiltration. By analyzing the products of B4C - Si system with different B4C/Si molar ratios after sintered at different temperatures, the formation condition of B12 (C, Si, B)3 was studied. The results indicate that B4 C starts to react with Si at 1300 ℃, leading to the formation of a small amount of B12 (C, Si, B)3 and SiC. The amount of B12 (C, Si, B)3 generated in the reaction increases with increasing sintering temperature. The sintering product of B4 C- Si System with a B4 C/Si molar ratio of 3 : 1 at 1500 ℃ is composed of B12 (C, Si, B)3 and SiC. The C/C- SiC composite fabricated by liquid silicon infiltration is composed of amorphous C, β-SiC and B12 (C, Si,B)3, and no residual Si is detected.
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