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首先在蓝宝石衬底上旋涂PMMA/copolymer双层胶,然后再进行电子束光刻处理,随后溅射铝膜,并结合剥离技术,从而制备图形化金属铝膜;最后再采用两步热处理法,使图形铝膜发生固相外延反应.在此过程中,侧重于电子束光刻和高温热处理的工艺优化研究.SEM测试结果表明,图形化铝膜在450℃低温氧化热处理24h后,其图形形貌没有发生明显改变;在温度低于1200℃的高温热处理1h后,图形仍然存在.HRXRD分析表明,图形化铝膜在450℃低温热处理24h后再在1000℃高温热处理1h,可在蓝宝石衬底上形成氧化铝外延薄膜;并且相比于基片,氧化铝外延薄膜的结晶质量还有所提高.本方法成功实现了高效大功率用LED蓝宝石图形衬底的制备.

参考文献

[1] Lee, S.-J.;Cho, C.-Y.;Hong, S.-H.;Han, S.-H.;Yoon, S.;Park, Y.;Park, S.-J. .Improved performance of GaN-based light-emitting diodes with high-quality GaN grown on InN islands[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2011(42):425101-1-425101-5.
[2] Yongjian Sun;Simeon Trieu;Tongjun Yu;Zhizhong Chen;Shengli Qi;Pengfei Tian;Junjing Deng;Xiaoming Jin;Guoyi Zhang .GaN-based LEDs with a high light extraction composite surface structure fabricated by a modified YAG laser lift-off technology and the patterned sapphire substrates[J].Semiconductor Science and Technology,2011(8):68-72.
[3] 崔林,汪桂根,张化宇,周福强,韩杰才.用于GaN基发光二极管的蓝宝石图形衬底制备进展[J].无机材料学报,2012(09):897-905.
[4] Hsiao-Chiu Hsu;Yan-Kuin Su;Shyh-Jer Huang;Ricky W. Chuang;Shin-Hao Cheng;Chiao-Yang Cheng .Effects of Trimethylgallium Flow Rate on a-Plane GaN Growth on r-Plane Sapphire during One-Sidewall-Seeded Epitaxial Lateral Overgrowth[J].Applied physics express,2011(3):35501.1-35501.3.
[5] 邵慧慧,李树强,曲爽,李毓锋,王成新,徐现刚.湿法腐蚀制备蓝宝石图形衬底的研究[J].人工晶体学报,2010(06):1443-1445.
[6] Yi H;Chang J .Proximity-effect correction in electron-beam lithography on metal multi-layers[J].Journal of Materials Science,2007(13):5159-5164.
[7] Bonzel HP.;Mullins WW. .SMOOTHING OF PERTURBED VICINAL SURFACES[J].Surface Science: A Journal Devoted to the Physics and Chemistry of Interfaces,1996(1/3):285-300.
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