用射频反应磁控溅射的方法在Si(100)衬底和Cu膜间制备Ta-Si-N(10 nm)/Zr(20 nm)双层结构的扩散阻挡层.Cu/Ta-Si-N/Zr/Si样品在高纯氮气的保护下从600至800℃退火1 h.通过四探针电阻测试仪(FPP)、SEM、XRD和AES研究Cu/Ta-Si-N/Zr/Si系统在退火过程中的热稳定性.结果表明:沉积到Zr膜上的Ta-Si-N表面平坦,为典型的非晶态结构;Cu/Ta-Si-N/Zr/Si样品650℃以上退火后Zr原子扩散到Si中形成的ZrSi2能有效地降低Ta-Si-N与Si之间的接触电阻;Ta-Si-N/Zr阻挡层750℃退火后仍能有效地阻止Cu的扩散.
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