通过电化学沉积,在阳极氧化法制备的高度有序TiO2纳米管阵列表面均匀地沉积Si元素.扫描电子显微照片显示Si掺杂的TiO2纳米管垂直于基底定向生长.X射线衍射分析表明,所引入的Si可能掺入到TiO2的晶格中,因而提高了TiO2的热稳定性,抑制了金红石相的生成及晶粒的长大.紫外-可见漫反射分析表明Si掺杂的TiO2纳米管吸收边带发生了明显的蓝移,并且在紫外区的吸收强度明显增强.与未掺杂的TiO2纳米管相比,Si掺杂TiO2纳米管电极的紫外光电化学响应显著提高,其光电流密度是未掺杂的1.48倍.硅掺杂TiO2纳米管阵列光电催化降解五氯酚的动力学常数(1.651h-1)是未掺杂TiO2纳米管电极(0.823h-1)的2.0倍.
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