以碳化硅和铝粉为原料,均匀混合后在不同气氛中于2000℃下保温0.5h制得粉体.用X射线衍射分析(XRD)和扫描电子显微镜(SEM)对其进行表征.同时在8.2～12.4 GHz频率范围内测试其介电性能.结果表明:在N2气氛中,当铝的含量较少时,未出现AlN物相,当铝含量超过10at%时,AlN相开始出现,并且AlN的含量随着铝含量的增加而增加.掺杂铝样品与未掺杂铝样品相比,其介电常数实部ε'和介电损耗tanδ皆降低,且随着铝含量的增加而逐步降低,主要是因为AlN具有较低的介电常数实部和损耗.
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