微机电系统(MEMS)的发展要求Si基片上的永磁薄膜具有良好的热稳定性.采用磁控溅射工艺在单晶Si(100)基片上沉积了SmCo基永磁薄膜,研究了溅射参数对薄膜沉积速率、微观结构、晶体结构和磁性能的影响.结果表明:通过调整溅射参数可以获得TbCu7型结构的SmCo基永磁薄膜.该薄膜具有良好的晶粒取向和微观结构,因而获得了较好的面内磁性能,其反磁化过程主要受控于畴壁钉扎机制.
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