Sn量子点的研究进展

材料导报, 2010, 24(z1): 74-84.

Sn量子点的研究进展

赵希磊 ^1, , 王科范 ^2, , 张伟风 ^3, , 顾玉宗 ^4,

1.河南大学微系统物理研究所和光伏材料省重点实验室,开封475004

2.河南大学微系统物理研究所和光伏材料省重点实验室,开封475004

3.河南大学微系统物理研究所和光伏材料省重点实验室,开封475004

4.河南大学微系统物理研究所和光伏材料省重点实验室,开封475004

基金项目: 河南大学省部共建项目(SBGJ090514) 教育部"博士生创新计划"同步辐射研究生创新基金资助项目(20090655S)

关键词： Sn量子点 , 生长技术 , 光学性质 , 电学性质 , 理论计算

Research Development of Sn Quantum Dot

Sn量子点可用于制作单电子器件、高密度存储单元、红外探测器以及发射器等,具有重要的研究意义.介绍了离子注入、分子束外延、磁控溅射和固相外延等各种制备Sn量子点的生长技术,综述了Sn量子点的光学性质、电学性质以及理论计算研究结果,指出了Sn量子点研究面临的关键问题以及研究方向.

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Sn量子点的研究进展

Research Development of Sn Quantum Dot

参考文献