GaN基材料生长及其在光电器件领域的应用

材料导报, 2002, 16(1): 31-35.

GaN基材料生长及其在光电器件领域的应用

王三胜 ^1, , 顾彪 ^2, , 徐茵 ^3, , 秦福文 ^4, , 窦宝锋 ^5, , 杨大智 ^6,

1.大连理工大学电气工程与应用电子技术系

2.大连理工大学电气工程与应用电子技术系;三束材料改性国家重点实验室

3.大连理工大学电气工程与应用电子技术系;三束材料改性国家重点实验室

4.大连理工大学电气工程与应用电子技术系;三束材料改性国家重点实验室

5.大连理工大学电气工程与应用电子技术系

6.三束材料改性国家重点实验室;材料科学与工程系大连,116024

基金项目: 国家高技术研究发展计划(863计划)(715-011-0033) 国家自然科学基金(69976008)

关键词： GaN , 外延生长 , 掺杂 , 半导体器件

Growth Methods of GaN-Based Semiconductor Materials and Their Applications in Optoelectronic Devices

GaN具有禁带宽度大、热导率高、电子饱和漂移速度大和介电常数小等特点,在高亮度发光二极管、短波长激光二板管、高性能紫外探测器和高温、高频、大功率半导体器件等领域有着广泛的应用前景.介绍了GaN基半导体材料的制备方法,异质结构以及在光电子和微电子器件领域的应用,并讨论了今后的发展趋势.

参考文献

[1]	Strite S;Morkoq H .[J].Journal of Vacuum Science and Technology,1992,B10(04):1237.
[2]	Morkoq H;Strite S;Gao G B et al.[J].Journal of Applied Physics,1994,76(03):1363.
[3]	Johnson W C;Parsons J B;d Crew M C .[J].Journal of Physical Chemistry,1932,36:2561.
[4]	Maruska H P;Tietjen J J .[J].Applied Physics Letters,1969,15:327.
[5]	Amano H;Akasaki I;Hiramatsu K et al.[J].THIN SOLID FILMS,1998,163:415.
[6]	Nakamura S .[J].Japanese Journal of Applied Physics,1991,30:1705.
[7]	Amano H;Kito M;Hiramatsu K et al.[J].Japanese Journal of Applied Physics,1989,28:2112.
[8]	Nakamura S;Mukai T;Senoh M et al.[J].Japanese Journal of Applied Physics,1992,31:1139.
[9]	Yamane H;Shimada M;Clarke S J et al.[J].Chemistry of Materials,1997,9:413.
[10]	Liu H;Thompson A G;Chern C S.Fall Meeting of the Electrochemical Society Miami FL Oct.9 - 14[C].,1995:328.
[11]	Wang J;Ziqiang Z;Ki-tae P et al.[J].Journal of Crystal Growth,1997,177:181.
[12]	陈鹏.Si基GaN外延生长[J].固体电子学研究与进展,1999(02):199.
[13]	Gu B;Xu Y;Qin F W.[A].北京,1998:49.
[14]	GuB;Xu Y;Qin F W et al.[J].Plasma Chemistry and Plasma Processing,2002,22(01)
[15]	Lee NE.;Kim YW.;Greene JE.;Powell RC. .MOLECULAR BEAM EPITAXY OF GAN(0001) UTILIZING NH3 AND/OR NHX+ IONS - GROWTH KINETICS AND DEFECT STRUCTURE[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,1995(5):2293-2302.
[16]	Kim W.;Botchkarev AE.;Salvador A.;Mohammad SN.;Morkoc H.;Aktas O. .REACTIVE MOLECULAR BEAM EPITAXY OF WURTZITE GAN - MATERIALS CHARACTERISTICS AND GROWTH KINETICS[J].Journal of Applied Physics,1996(10):7657-7666.
[17]	Cho S H;Tanaka U;Hata K et al.[J].Japanese Journal of Applied Physics,1996,35:644.
[18]	Lin M E;Sverdlov B Moroq H .[J].Journal of Applied Physics,1993,74:5303.
[19]	Liu H;Frenkel A C;Kim J G et al.[J].Journal of Applied Physics,1993,74:6124.
[20]	Mackenzie JD.;Stewart JD.;Muhr GT.;Abernathy CR. .GROWTH OF GROUP III NITRIDES BY CHEMICAL BEAM EPITAXY[J].Journal of Crystal Growth,1996(1/4):143-148.
[21]	Detchprohm T;Hiramatsu K;Amano H et al.[J].Applied Physics Letters,1992,61:2688.
[22]	Lee H;Harris J S .[J].Journal of Crystal Growth,1996,169:689.
[23]	Nam, OH;Bremser, MD;Zheleva, TS;Davis, RF .Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy[J].Applied Physics Letters,1997(18):2638-2640.
[24]	Linticum K J;Gehrke T;Thomson D B et al.[J].Applied Physics Letters,1999,75:197.
[25]	Nakamura S;Mukai T;Senoh M .[J].Journal of Applied Physics,1992,71:5543.
[26]	Khan M A;Kuznia J N;Van Hove J M et al.[J].Applied Physics Letters,1991,58:526.
[27]	Amano H;Kito M;Hiramatsu K et al.[J].Japanese Journal of Applied Physics,1989,28:2112.
[28]	Nakamura S;Mukai T;Senoh M .[J].Japanese Journal of Applied Physics,1992,31:192.
[29]	Macmillan MF.;Devaty RP.;Choyke WJ.;Khan MA.;Kuznia JN. Krishnankutty S.;Clemen LL. .CATHODOLUMINESCENCE OF ALN-GAN SHORT PERIOD SUPERLATTICES[J].Journal of Applied Physics,1996(4):2378-2382.
[30]	Khan M A;Skogman R A;Van Hove J M et al.[J].Applied Physics Letters,1990,56:1257.
[31]	Khan M A;Kuznia J N;Van Hove J M et al.[J].Applied Physics Letters,1991,59:1449.
[32]	Nakamura S;Senoh M;Iwasa N et al.[J].Applied Physics Letters,1995,67:1868.
[33]	Nakamura S;Senoh M;Iwasa N et al.[J].Japanese Journal of Applied Physics,1995,34:797.
[34]	Nakamura S;Senoh M;Nagahama S et al.[J].Applied Physics Letters,1996,69:3034.
[35]	Nakamura S.;Nagahama S.;Iwasa N.;Yamada T.;Matsushita T. Kiyoku H.;Sugimoto Y.;Kozaki T.;Umemoto H.;Sano M.;Chocho K.;Senoh M. .Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates[J].Applied physics letters,1998(16):2014-2016.
[36]	pankove J I;Miller E A;Berkeyheiser J E .[J].RCA Review,1971,32:383.
[37]	Nakamura S;Mukai T;Senoh M .[J].Japanese Journal of Applied Physics,1991,30:1998.
[38]	Nakamura S;Mukai T;Senoh M .[J].Applied Physics Letters,1994,64:1687.
[39]	Mukai T;Narimatsu H;Nakamurs S .[J].Japanese Journal of Applied Physics,1998,37:479.
[40]	Mukai T;Yamada M;Nakamura S .[J].Japanese Journal of Applied Physics,1998,37:1358.
[41]	Monemar B.[J].Journal of Materials Science:Materials in Electronics,1999(10):227.
[42]	Lim B W;Chen Q C;Yang J Y et al.[J].Applied Physics Letters,1996,68:3761.
[43]	Nakamura S;Senoh M;Nagahama S et al.[J].Japanese Journal of Applied Physics,1996,35:74.
[44]	Mukai T;Nagahama S;Iwasa N.Proc.China Japan Workshop on Nitride Semiconductor Materials and Devices 12-17 March[C].Shanghai P.R.China,2001:96.
[45]	Binari S C;Diettich H B;S.Peatron.GaN and Related Materials[M].Gordon and Breach Science Publishers,1997:509.
[46]	pankove J I;Leksono M;Chang S S et al.[J].MRS Internet Journal,1996,1:39.
[47]	Khan M A;Cheng Q;Sun C J.The First International Symposium on Gallium Nitride and Related MaterialsMRS Fall Meeting Symposium AAA Boston MADecember[C].,1995:35.
[48]	Zhang X;Walker D;Saxler A et al.[J].Applied Physics Letters,1996,71:1856.
[49]	pankove J I;Schade H P .[J].Applied Physics Letters,1974,25:53.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

GaN基材料生长及其在光电器件领域的应用

Growth Methods of GaN-Based Semiconductor Materials and Their Applications in Optoelectronic Devices

参考文献