退火温度对PLT铁电薄膜微结构和电畴的影响

材料导报, 2006, 20(11): 119-121.

退火温度对PLT铁电薄膜微结构和电畴的影响

黄惠东 ^1, , 王志红 ^2, , 路胜博 ^3, , 吴家刚 ^4, , 朱基亮 ^5, , 肖定全 ^6,

1.电子科技大学微电子与固体电子学院,成都,610054

2.电子科技大学微电子与固体电子学院,成都,610054

3.电子科技大学微电子与固体电子学院,成都,610054

4.四川大学材料系,成都,610064

5.四川大学材料系,成都,610064

6.四川大学材料系,成都,610064

基金项目: 国家重点基础研究发展计划(973计划)(51310)

关键词： PLT , 铁电薄膜 , 晶化 , XRD , PFM

Effects of annealing temperature on the surface and ferroelectric domain of PLT films

常温下采用射频磁控溅射技术在Pt/TI/SiO2/Si(100)基片上淀积(Pb0.9La0.1)TiO3薄膜,分别在550℃、570℃、600℃、630℃退火1h.采用X射线衍射、原子力显微镜和压电响应力显微镜检测不同退火温度的薄膜,讨论退火温度对薄膜结构、表面形貌和电畴结构的影响.结果表明:随着退火温度的升高,薄膜中钙钛矿相的含量增多,表面粗糙度和颗粒尺寸不断增大,薄膜从无畴状态变为以90°畴为主的多畴,而在退火升降温过程中,由于应力的影响,面外畴更多为取向向下的负畴.

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退火温度对PLT铁电薄膜微结构和电畴的影响

Effects of annealing temperature on the surface and ferroelectric domain of PLT films

参考文献