采用固相法制备BiLiMg（NbxMx）O系BMN基陶瓷样品。分别研究了Zr4＋离子、Sn4＋离子和Ti4＋离子替代Nb5＋离子对BMN陶瓷性能的影响。结果表明,Zr4＋离子、Sn4＋离子和Ti4＋离子替代量较小时,相结构为单一焦绿石结构。随着Zr4＋离子、Sn4＋离子替代量的增加,样品中空隙增多;Ti4＋离子替代量将直接影响样品中晶粒的生长方向,对样品中空隙影响不明显。介电性能方面,不同替换离子介电性能最佳状态出现在不同替换量的情况下（m为比例系数）：在Zr4＋离子替换量为2m时,介电常数为177.4177,介电损耗为0.00034;Sn4＋离子替代量为1m时,介电常数为174.9671,介电损耗为0.00038;Ti4＋离子替代量为4m时,介电常数为188.4959,介电损耗为0.00027。
In this article, we used solid state method getting BiLiMg(Nbx Mx )O ceramic, which base ceramic. Mainly study on the different dielectric properties of BMN, when Zr4+, SniP, Ti4+ instead of NbS+. The result shows that when the replace quantity is a little, the phase structure is pyrochlore structure. With the Zr4+ ,Sn4+ increase, more interspace appear. But if change the quantity of Ti4+ , the grain growth di- rection will show diversity. What is more, the quantity of interspace changes less. With the different replace ion, different quantity engender different dielectric properties. When the quantity of Zr4+ is 2m, the dielectric constant is 177. 4177, and the dielectric loss is 0. 00034. When the quantity of Sn4e is lm, the dielectric con- stant is 174. 9671, and the dielectric loss is 0. 00038. When the quantity of Tin+ is 4m ,the dielectric constant is 188. 4959, and the dielectric loss is 0. 00027. The m is scale factor.
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