熔硅浸渗工艺快速制备C/SiC复合材料的非等温氧化行为

中国有色金属学报, 2007, 17(10): 1597-1603.

熔硅浸渗工艺快速制备C/SiC复合材料的非等温氧化行为

闫志巧 ^1, , 熊翔 ^2, , 肖鹏 ^3, , 姜四洲 ^4, , 黄伯云 ^5,

1.中南大学,粉末冶金国家重点实验室,长沙,410083

2.中南大学,粉末冶金国家重点实验室,长沙,410083

3.中南大学,粉末冶金国家重点实验室,长沙,410083

4.中南大学,粉末冶金国家重点实验室,长沙,410083

5.中南大学,粉末冶金国家重点实验室,长沙,410083

基金项目: 国家重点基础研究发展计划(973计划)(2006CB600908) 国家高技术研究发展计划(863计划)(2006AA03Z560)

关键词： C/SiC复合材料 , C/C复合材料 , 熔硅浸渗 , 氧化动力学 , 机理

Non-isothermal oxidation behavior of C/SiC composites rapidly prepared by molten silicon infiltration technique

以针刺整体毡为预制体,采用化学气相沉积(CVD)增密制备C/C多孔体,用熔硅浸渗(MSI)工艺快速制备C/SiC复合材料,通过非等温热重分析研究材料低温下的氧化反应动力学和反应机理.结果表明:C/SiC材料的非等温氧化过程呈现自催化特征,氧化机理为随机成核,氧化动力学参数为:1g(A/min-1)=8.752,Ea=169.167 kJ/mol.MSI工艺中,纤维因硅化损伤产生的活性碳原子易先发生氧化,使C/SiC材料起始氧化温度仅为524℃,比C/C材料约低100℃,且氧化产生大量的裂纹和界面,使材料在氧化初期即具有大的氧化反应速率,C/C材料则出现氧化反应速率滞后现象.

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