W浆料中SiO2含量对AlN共烧基板烧结性能的影响

材料导报, 2004, 18(6): 88-90.

1.电子科技大学微电子与固体电子学院,成都,610054

2.电子科技大学微电子与固体电子学院,成都,610054

3.电子科技大学微电子与固体电子学院,成都,610054

4.信息产业部电子四十三所,合肥,230022

5.信息产业部电子四十三所,合肥,230022

基金项目: 信息产业部电子科技研究院预研项目(30.2.2.5-1)

The Influence of SiO2 Concentration in the Tungsten Paste for AlN Cofire Multi-layer Ceramic Substrate

研究了在AlN多层布线共烧基板中,W-SiO2浆料体系中SiO2含量对共烧基板烧结性能的影响.结果表明SiO2的质量分数在0.45%时,AlN多层布线共烧基板的导带方阻达到10mΩ/□,基板的翘曲度小于50μm/50mm.

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