用四端引线法测量了4.2K到室温的非晶态(Fe_(1-x)Co_x)_(18)Si_(9.5)B_(12.5)(x=0—1.0)合金的电阻率。结果表明,x=0—1.0的所有样品都出现了电阻率与温度关系的极小值。电阻率极小值温度T_(min)随Co含量x的增加而增加,在x=0.9时出现极大值。在T_(min)温度以下,电阻率与温度关系符合-lnT规律。x=0.5—1.0的样品,电阻率与-lnT关系出现两个斜率。在T_(min)温度以上,约100K以下电阻率符合T~2规律,在约100K以上电阻率则按T~(3/2)规律变化。实验结果表明,约在9.5K和100K温区,电阻率与温度关系可近似表达为:ρ/ρ_(min)=ρ_0+AlnT+BT~2。显现类Kondo型电阻极小。电阻率的T~2关系来源于电子-声子散射。
The electrical resistivity measurements of the amorphous (Fe_(1-x)Co_x)_(78)Si_(9.5)B_(12.5)(x=0—1.0) alloys were made by a fourprobe technique at temperature range from 4.2 to 300K. It was found that the resistivity minima have been observed over the whole concentration range for x=0—1.0. The temperature T_(min) at which the resistivity is minimum increased with increaing Co content, and approached to the maximum at x=0.9. Below T_(min) the resistivity can be described by a logarithmic temperature dependence over the whole content. In the temperature range between T_(min) and 100K the resistivity has a T~2 temperature dependence and follows T_(3/2) temperature dependence above 100K. In summary, the temperature dependence of the electrical resistivity for all content may be expressed at temperature range (9.5—100K) by ρ/ρ_(min)=ρ_0+AlnT+BT~2. A Kondo-type resistivity minimum has been observed in these alloys, A T~2 temperature dependence of resistivity may originate from electron-phonon scattering.
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