以聚乙二醇（PEG-400）为添加剂,采用恒电位方法直接在ITO导电玻璃上制备了ZnO纳米棒阵列膜,用扫描电子显微镜（SEM）、X射线衍射仪（XRD）等分析手段对ZnO纳米棒阵列的形貌和结构进行了表征。结果表明所得ZnO纳米棒为六方纤锌矿型单晶结构,沿着垂直于基底的c轴极性生长,呈现出均匀的六方棒状形貌;在电沉积初期,PEG-400通过其大分子链的空间位阻作用及包覆作用对ZnO成核粒子的形貌和分散性产生显著影响,进而可以有效调整进一步生长所得ZnO纳米棒阵列的密度和垂直度,当PEG-400在电沉积液中的体积分数为2%时,可以得到取向良好垂直度高的纳米棒阵列;光电性能测试表明,ZnO纳米棒阵列膜电极的光电流随着阵列规整度提高而增大。
Well-aligned ZnO nanorod arrays were successfully fabricated directly on indium doped tin oxide coated conducting glass（ITO） substrate by a facial electrodeposited process assisted with PEG-400 as additive.SEM and XRD were employed to characterize the nanostructures and their photoelectrochemical properties were also investigated.The results indicated that the as-prepared ZnO nanorod displayed a pure hexagonal wurtzite structure and a regular hexagonal cylindrical shape.The influence of PEG-400 on ZnO seed layers and ZnO NR arrays was discussed in detail.With the addition of 2% PEG-400,a dense and better-dispersed ZnO seedlayer was obtained,and a preferential oriented ZnO NR array with regular morphology,better crystallinity and higher photocurrent was presented.
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