采用直流反应磁控溅射法淀积ZrN薄膜发现在(100)晶向硅片上ZrN薄膜按(111)晶向生长,控制生长工艺可以获得ZrN(111)晶向的外延生长膜.
ZrN films were deposited by reactive magnetron sputtering.The crystalline quality of ZrN films was investigated by X-ray diffraction. The results indicated the growth of zirconium nitride had the(l I l) orientation priority. Controlling the growth conditi
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