用氨化溅射Ga2O3薄膜的方法,成功地合成了一维GaN纳米线.用X射线衍射仪(XRD)、扫描电镜(SEM)、透射电镜(TEM)和高分辨电镜(HRTEM)对样品进行了分析.生成的GaN纳米线平直光滑,其直径为20 nm～90 nm,长可达50 μm;纳米线为高质量的单晶六方纤锌矿GaN,沿[110]方向生长.用此工艺制备GaN纳米线,避免了在制备过程中引入杂质,合成的纳米线纯度较高.
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